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Número de pieza | STFU18N65M2 | |
Descripción | N-CHANNEL POWER MOSFET | |
Fabricantes | STMicroelectronics | |
Logotipo | ||
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No Preview Available ! STFU18N65M2
N-channel 650 V, 0.275 Ω typ., 12 A MDmesh™ M2
Power MOSFET in a TO-220FP ultra narrow leads package
Datasheet - production data
3
2
1
TO-220FP
ultra narrow leads
Figure 1: Internal schematic diagram
D(2)
G(1)
Features
Order code
STFU18N65M2
VDS
650 V
RDS(on) max
0.33 Ω
ID
12 A
Extremely low gate charge
Excellent output capacitance (Coss) profile
100% avalanche tested
Zener-protected
Applications
Switching applications
LLC converters, resonant converters
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
S(3)
Order code
STFU18N65M2
AM15572v1_no_tab
Table 1: Device summary
Marking
Package
18N65M2
TO-220FP
ultra narrow leads
Packaging
Tube
October 2015
DocID027562 Rev 2
This is information on a product in full production.
1/12
www.st.com
1 page STFU18N65M2
Symbol
Parameter
Table 8: Source drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
ISD
ISDM(1)
VSD(2)
trr
Qrr
IRRM
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery
charge
Reverse recovery
current
- 12 A
- 48 A
ISD = 12 A, VGS = 0 V
- 1.6 V
ISD = 12 A, di/dt = 100 A/µs,
- 331
VDD = 60 V ( see Figure 16: "Test
circuit for inductive load
-
3.4
switching and diode recovery
times" )
- 20.5
ns
µC
A
trr Reverse recovery time
Qrr
Reverse recovery
charge
IRRM
Reverse recovery
current
ISD = 12 A, di/dt = 100 A/µs,
VDD = 60 V, Tj = 150 °C, (see
Figure 16: "Test circuit for
inductive load switching and
diode recovery times" )
- 462
- 4.6
- 20
ns
µC
A
Notes:
(1)Pulse width limited by safe operating area.
(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%.
DocID027562 Rev 2
5/12
5 Page STFU18N65M2
Revision history
5 Revision history
Date
05-Mar-2015
07-Oct-2015
Revision
1
2
Table 10: Document revision history
Changes
Initial release
Document status promoted from preliminary to production data.
DocID027562 Rev 2
11/12
11 Page |
Páginas | Total 12 Páginas | |
PDF Descargar | [ Datasheet STFU18N65M2.PDF ] |
Número de pieza | Descripción | Fabricantes |
STFU18N65M2 | N-CHANNEL POWER MOSFET | STMicroelectronics |
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