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PDF STB130N6F7 Data sheet ( Hoja de datos )
| Número de pieza | STB130N6F7 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STB130N6F7
N-channel 60 V, 4.2 mΩ typ., 80 A STripFET™ F7
Power MOSFET in a D²PAK package
Datasheet - production data
TAB
3
1
D2PAK
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STB130N6F7
VDS
60 V
RDS(on) max.
5.0 mΩ
ID
80 A
PTOT
160 W
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
S(3)
Order code
STB130N6F7
AM01475v1_Tab
Table 1: Device summary
Marking
Package
130N6F7
D²PAK
Packing
Tape and reel
December 2015
DocID027380 Rev 5
This is information on a product in full production.
1/14
www.st.com
1 page  
STB130N6F7
2.1 Electrical characteristics (curves)
Figure 2: Safe operating area
Electrical characteristics
Figure 3: Thermal impedance
Figure 4: Output characteristics
Figure 5: Transfer characteristics
Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance
DocID027380 Rev 5
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5 Page 
STB130N6F7
4.2 D²PAK packing information
Figure 21: Tape outline
Package information
DocID027380 Rev 5
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11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet STB130N6F7.PDF ] | |
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