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PDF STD20P3H6AG Data sheet ( Hoja de datos )
| Número de pieza | STD20P3H6AG | |
| Descripción | P-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
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STD20P3H6AG
Automotive-grade P-channel -30 V, 33 mΩ typ., -20 A
STripFET™ F6 Power MOSFET in a DPAK package
Datasheet - production data
Figure 1: Internal schematic diagram
D(2, TAB)
G(1)
Features
Order code
STD20P3H6AG
VDS
-30 V
RDS(on) max.
50 mΩ
ID
-20 A
Designed for automotive applications and
AEC-Q101 qualified
Very low on-resistance
Very low gate charge
High avalanche ruggedness
Low gate drive power loss
Applications
Switching applications
Description
This device is a P-channel Power MOSFET
developed using the STripFET™ F6 technology,
with a new trench gate structure. The resulting
Power MOSFET exhibits very low RDS(on) in all
packages.
S(3)
Order code
STD20P3H6AG
AM11258v1
Table 1: Device summary
Marking
Package
20P3H6
DPAK
Packing
Tape and reel
September 2015
DocID028377 Rev 2
This is information on a product in full production.
1/15
www.st.com
1 page  
STD20P3H6AG
Symbol Parameter
ISD
Source-drain
current
ISDM(1)
Source-drain
current
(pulsed)
VSD(2)
Forward on
voltage
trr
Reverse
recovery time
Reverse
Qrr recovery
charge
Reverse
IRRM recovery
current
Table 7: Source-drain diode
Test conditions
Electrical characteristics
Min. Typ. Max. Unit
- -20 A
- -80 A
VGS = 0 V, ISD = -20 A
ISD = -20 A, di/dt = -100 A/µs, VDD = -24 V
(see Figure 15: "Test circuit for inductive
load switching and diode recovery times")
- -1.3 V
- 18.4
ns
- 11.2
nC
- -1.2
A
Notes:
(1) Pulse width is limited by safe operating area.
(2) Pulse test: pulse duration = 300 µs, duty cycle 1.5%.
DocID028377 Rev 2
5/15
5 Page 
STD20P3H6AG
Package information
Figure 17: DPAK (TO-252) recommended footprint (dimensions are in mm)
DocID028377 Rev 2
11/15
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| PDF Descargar | [ Datasheet STD20P3H6AG.PDF ] | |
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