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PDF STD80N6F6 Data sheet ( Hoja de datos )
| Número de pieza | STD80N6F6 | |
| Descripción | N-CHANNEL POWER MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STD80N6F6
Automotive-grade N-channel 60 V, 4.4 mΩ typ., 80 A
STripFET™ VI DeepGATE™ Power MOSFET in a DPAK package
Datasheet - production data
Features
7$%
'3$.
Order code
STD80N6F6
VDS
60 V
RDS(on) max. ID
5 mΩ
(1)
80 A
1. Current limited by package
• Designed for automotive applications and
AEC-Q101 qualified
• Low gate charge
• Very low on-resistance
• High avalanche ruggedness
Figure 1. Internal schematic diagram
' Ć7$%
Applications
• Switching applications
Description
This device is an N-channel Power MOSFET
th
developed using the 6 generation of STripFET™
DeepGATE™ technology, with a new gate
*
structure. The resulting Power MOSFET exhibits
the lowest RDS(on) in all packages.
6
$0Y
Order code
STD80N6F6
Table 1. Device summary
Marking
Packages
80N6F6
DPAK
Packaging
Tape and reel
January 2014
This is information on a product in full production.
DocID023471 Rev 2
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1 page  
STD80N6F6
Electrical characteristics
Symbol
Table 7. Source drain diode
Parameter
Test conditions
Min. Typ. Max Unit
ISD
(1)
ISDM
(2)
VSD
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 80 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 80 A, VDD = 48 V
di/dt = 100 A/μs,
Tj = 150 °C
1. Current limited by package.
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%
-
-
-
-
-
-
80 A
320 A
1.3 V
46 ns
65 nC
2.8 A
DocID023471 Rev 2
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STD80N6F6
Package mechanical data
Figure 14. DPAK footprint (a)
Footprint_REV_K
a. All dimensions are in millimeters
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11 Page | ||
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| PDF Descargar | [ Datasheet STD80N6F6.PDF ] | |
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