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부품번호 | AON7202 기능 |
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기능 | 30V N-Channel MOSFET | ||
제조업체 | Alpha & Omega Semiconductors | ||
로고 | |||
전체 6 페이지수
AON7202
30V N-Channel MOSFET
General Description
The AON7202 uses Trench MOSFET technology that
is uniquely optimized to provide the most efficient high
frequency switching performance. Power losses are
minimized due to an extremely low combination of
RDS(ON) and Crss.In addition, switching behavior is well
controlled with a “Schottky style” soft recovery body
diode.
Product Summary
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
RDS(ON) (at VGS = 4.5V)
100% UIS Tested
100% Rg Tested
30V
40A
< 5mΩ
< 6.8mΩ
DFN 3x3 EP
Top View
Bottom View
Top View
Pin 1
1
2
3
4
8
7
6
G
5
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain TC=25°C
Current G
TC=100°C
Pulsed Drain Current C
ID
IDM
Continuous Drain TA=25°C
Current
TA=70°C
Avalanche Current C
Avalanche energy L=0.1mH C
IDSM
IAS, IAR
EAS, EAR
TC=25°C
Power Dissipation B TC=100°C
PD
TA=25°C
Power Dissipation A TA=70°C
PDSM
Junction and Storage Temperature Range
TJ, TSTG
Maximum
30
±20
40
31
150
20
16
38
72
36
14
3.1
2
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJC
Typ
30
60
2.8
Max
40
75
3.4
D
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
Rev 1: Feb 2010
www.aosmd.com
Page 1 of 6
AON7202
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 2800
VDS=15V
8 ID=20A
6
2400
2000
1600
Ciss
4
2
0
0 5 10 15 20 25 30
Qg (nC)
Figure 7: Gate-Charge Characteristics
1200
800
400
0
0
Coss
Crss
5 10 15 20 25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
1000.0
100.0
10.0
1.0
0.1
RDS(ON)
limited
10µs 10µs
100µs
DC
1ms
10ms
TJ(Max)=150°C
TC=25°C
0.0
0.01
0.1 1 10
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
100
200
160 TJ(Max)=150°C
TC=25°C
120 17
5
80 2
10
40
0
0.001
0.01
0.1
1
10
0
Figure
10:
Single
Pulse
Pulse
Width (s)
Power Rating
Ju1nc8tion-to-
Case (Note F)
10
D=Ton/T
In descending order
TJ,PK=TC+PDM.ZθJC.RθJC
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=3.6°C/W
1
40
0.1
0.01
0.00001
PD
Single Pulse
Ton
T
0.0001
0.001
0.01
0.1
1
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
10
100
Rev 1: Feb 2010
www.aosmd.com
Page 4 of 6
4페이지 | |||
구 성 | 총 6 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
AON7200 | 30V N-Channel MOSFET | Alpha & Omega Semiconductors |
AON7202 | 30V N-Channel MOSFET | Alpha & Omega Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |