|
|
Número de pieza | IRF8788PBF-1 | |
Descripción | Power MOSFET ( Transistor ) | |
Fabricantes | International Rectifier | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de IRF8788PBF-1 (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! VDS
RDS(on) max
(@VGS = 10V)
RDS(on) max
(@VGS = 4.5V)
Qg (typical)
ID
(@TA = 25°C)
30 V
2.8
mΩ
3.8
44 nC
24 A
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
MSL1, Industrial qualification
IRF8788PbF-1
HEXFET® Power MOSFET
S1
S2
S3
G4
AA
8D
7D
6D
5D
Top View
SO-8
Benefits
⇒ Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
Base Part Number Package Type
IRF8788PbF-1
SO-8
Standard Pack
Form
Quantity
Tube/Bulk
95
Tape and Reel
4000
Orderable Part Number
IRF8788PbF-1
IRF8788TRPbF-1
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
TJ
TSTG
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Thermal Resistance
Parameter
gRθJL Junction-to-Drain Lead
fgRθJA Junction-to-Ambient
Notes through
are on page 9
Max.
30
±20
24
19
190
2.5
1.6
0.02
-55 to + 150
Typ.
–––
–––
Max.
20
50
Units
V
A
W
W/°C
°C
Units
°C/W
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback
June 23, 2014
1 page IRF8788PbF-1
24
20
16
12
8
4
0
25
50 75 100 125
TA , Ambient Temperature (°C)
150
2.5
ID = 100μA
2.0
ID = 250μA
1.5
1.0
-75 -50 -25 0 25 50 75 100 125 150
TJ , Temperature ( °C )
Fig 9. Maximum Drain Current vs.
Ambient Temperature
Fig 10. Threshold Voltage vs. Temperature
100
D = 0.50
10
1
0.1
0.01
1E-006
0.20
0.10
0.05
0.02
0.01
Ri (°C/W) τι (sec)
0.0141064 0.000057
0.0210000 0.000286
τJ
R1R1 R2R2 R3R3 R4R4 R5R5 R6R6 R7R7 R8R8
0.2184000
0.8204000
τJ τa 4.7558194
τ1
τ1
τ2
τ2
τ3 τ4 τ5 τ6 τ7 τ8
τ3 τ4 τ5 τ6 τ7 τ8
0.4648000
28.9076170
0.000375
0.001902
0.004544
0.013931
0.038563
Ci=Ciτi/RiiRi
15.1191958 2.069546
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
1
10 100
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
June 23, 2014
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet IRF8788PBF-1.PDF ] |
Número de pieza | Descripción | Fabricantes |
IRF8788PBF-1 | Power MOSFET ( Transistor ) | International Rectifier |
Número de pieza | Descripción | Fabricantes |
SLA6805M | High Voltage 3 phase Motor Driver IC. |
Sanken |
SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
Analog Devices |
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |