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DTA114TM3 데이터시트 PDF




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DTA114TM3 데이터시트, 핀배열, 회로
MUN2115, MMUN2115L,
MUN5115, DTA114TE,
DTA114TM3, NSBA114TF3
Digital Transistors (BRT)
R1 = 10 kW, R2 = 8 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified
and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
CollectorBase Voltage
VCBO
50
Vdc
CollectorEmitter Voltage
VCEO
50
Vdc
Collector Current Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
40
Vdc
Input Reverse Voltage
VIN(rev)
5
Vdc
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
PIN CONNECTIONS
PIN 3
COLLECTOR
PIN 1
BASE
R1
(OUTPUT)
(INPUT) R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
XX MG
G
1
SC59
CASE 318D
STYLE 1
XXX MG
G
1
SOT23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
SC70/SOT323
CASE 419
STYLE 3
SC75
CASE 463
STYLE 1
XX M
1
XM 1
SOT723
CASE 631AA
STYLE 1
SOT1123
CASE 524AA
STYLE 1
XXX
M
G
= Specific Device Code
= Date Code*
= PbFree Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2013
March, 2013 Rev. 2
1
Publication Order Number:
DTA114T/D




DTA114TM3 pdf, 반도체, 판매, 대치품
MUN2115, MMUN2115L, MUN5115, DTA114TE, DTA114TM3, NSBA114TF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SOT1123) (NSBA114TF3)
Total Device Dissipation
TA = 25°C
(Note 3)
(Note 4)
Derate above 25°C
(Note 4)
(Note 3)
Thermal Resistance,
Junction to Ambient
(Note 3)
(Note 4)
Thermal Resistance, Junction to Lead
(Note 3)
Junction and Storage Temperature Range
1. FR4 @ Minimum Pad.
2. FR4 @ 1.0 x 1.0 Inch Pad.
3. FR4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR4 @ 500 mm2, 1 oz. copper traces, still air.
Symbol
Max
PD
RqJA
RqJL
TJ, Tstg
254
297
2.0
2.4
493
421
193
55 to +150
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol Min Typ Max
OFF CHARACTERISTICS
CollectorBase Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
− − 100
CollectorEmitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
− − 500
EmitterBase Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
− − 0.9
CollectorBase Breakdown Voltage
(IC = 10 mA, IE = 0)
CollectorEmitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0)
V(BR)CBO
V(BR)CEO
50
50
ON CHARACTERISTICS
DC Current Gain (Note 5)
(IC = 5.0 mA, VCE = 10 V)
hFE
160 250
CollectorEmitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 0.3 mA)
VCE(sat)
0.25
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Vi(off)
0.6 0.5
Input Voltage (on)
(VCE = 0.3 V, IC = 10 mA)
Vi(on)
1.7 1.2
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
Output Voltage (off)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
VOL
VOH
− − 0.2
4.9
Input Resistor
R1 7.0 10 13
Resistor Ratio
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
R1/R2 − − −
Unit
mW
mW/°C
°C/W
°C/W
°C
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
kW
http://onsemi.com
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DTA114TM3 전자부품, 판매, 대치품
MUN2115, MMUN2115L, MUN5115, DTA114TE, DTA114TM3, NSBA114TF3
PACKAGE DIMENSIONS
D
3
HE 1
2
E
b
e
A
A1
SC59
CASE 318D04
ISSUE H
C
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIM MIN
NOM MAX
A 1.00
1.15
1.30
A1 0.01
0.06
0.10
b 0.35 0.43 0.50
c 0.09 0.14 0.18
D 2.70
2.90
3.10
E 1.30
1.50
1.70
e 1.70 1.90 2.10
L 0.20
0.40
0.60
H E 2.50
2.80
3.00
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
MIN
0.039
0.001
0.014
0.003
0.106
0.051
0.067
0.008
0.099
INCHES
NOM
0.045
0.002
0.017
0.005
0.114
0.059
0.075
0.016
0.110
MAX
0.051
0.004
0.020
0.007
0.122
0.067
0.083
0.024
0.118
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.4
0.094
1.0
0.039
0.8
0.031
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
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