|
|
|
부품번호 | DTA123EE 기능 |
|
|
기능 | Digital Transistors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 11 페이지수
MUN2131, MMUN2131L,
MUN5131, DTA123EE,
DTA123EM3, NSBA123EF3
Digital Transistors (BRT)
R1 = 2.2 kW, R2 = 2.2 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a base−
emitter resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space.
Features
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
12
Vdc
Input Reverse Voltage
VIN(rev)
10
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
PIN CONNECTIONS
PIN 3
COLLECTOR
PIN 1
BASE
R1
(OUTPUT)
(INPUT) R2
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
XX MG
G
1
SC−59
CASE 318D
STYLE 1
XXX MG
G
1
SOT−23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
SC−70/SOT−323
CASE 419
STYLE 3
SC−75
CASE 463
STYLE 1
XX M
1
XM 1
SOT−723
CASE 631AA
STYLE 1
SOT−1123
CASE 524AA
STYLE 1
XXX
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
January, 2015 − Rev. 4
1
Publication Order Number:
DTA123E/D
MUN2131, MMUN2131L, MUN5131, DTA123EE, DTA123EM3, NSBA123EF3
Table 2. THERMAL CHARACTERISTICS
Characteristic
THERMAL CHARACTERISTICS (SOT−1123) (NSBA123EF3)
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction to Ambient
Thermal Resistance, Junction to Lead
Junction and Storage Temperature Range
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm2, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm2, 1 oz. copper traces, still air.
Symbol
Max
Unit
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
(Note 4)
(Note 3)
PD
RqJA
RqJL
TJ, Tstg
254
297
2.0
2.4
493
421
193
−55 to +150
mW
mW/°C
°C/W
°C/W
°C
Table 3. ELECTRICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted)
Characteristic
Symbol Min Typ Max
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(VCB = 50 V, IE = 0)
ICBO
− − 100
Collector−Emitter Cutoff Current
(VCE = 50 V, IB = 0)
ICEO
− − 500
Emitter−Base Cutoff Current
(VEB = 6.0 V, IC = 0)
IEBO
− − 2.3
Collector−Base Breakdown Voltage
(IC = 10 mA, IE = 0)
Collector−Emitter Breakdown Voltage (Note 5)
(IC = 2.0 mA, IB = 0)
V(BR)CBO
V(BR)CEO
50
50
−
−
−
−
ON CHARACTERISTICS
DC Current Gain (Note 5)
(IC = 5.0 mA, VCE = 10 V)
hFE
8.0 15
−
Collector−Emitter Saturation Voltage (Note 5)
(IC = 10 mA, IB = 5.0 mA)
VCE(sat)
−
− 0.25
Input Voltage (off)
(VCE = 5.0 V, IC = 100 mA)
Input Voltage (on)
(VCE = 0.3 V, IC = 20 mA)
Vi(off)
Vi(on)
− 1.2 0.5
2.0 1.7
−
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW)
VOL
− − 0.2
Output Voltage (off)
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW)
VOH
4.9 −
−
Input Resistor
R1 1.5 2.2 2.9
Resistor Ratio
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
R1/R2
0.8 1.0 1.2
Unit
nAdc
nAdc
mAdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
Vdc
kW
www.onsemi.com
4
4페이지 MUN2131, MMUN2131L, MUN5131, DTA123EE, DTA123EM3, NSBA123EF3
PACKAGE DIMENSIONS
E
A
A1
D
3
12
e
HE
b
SOT−23 (TO−236)
CASE 318−08
ISSUE AP
SEE VIEW C
c
0.25
q
L
L1
VIEW C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH
THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 0.89
1.00
1.11
A1 0.01
0.06
0.10
b 0.37 0.44 0.50
c 0.09 0.13 0.18
D 2.80
2.90
3.04
E 1.20
1.30
1.40
e 1.78 1.90 2.04
L 0.10
L1 0.35
0.20
0.54
0.30
0.69
H E 2.10
q 0°
2.40
−−−
2.64
10°
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
0°
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
10°
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
SOLDERING FOOTPRINT
0.95
0.037
0.95
0.037
0.9
0.035
0.8
0.031
2.0
0.079
ǒ ǓSCALE 10:1
mm
inches
www.onsemi.com
7
7페이지 | |||
구 성 | 총 11 페이지수 | ||
다운로드 | [ DTA123EE.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
DTA123E | PNP SILICON BIAS RESISTOR TRANSISTOR | ON Semiconductor |
DTA123E | DIGITAL TRANSISTORS | Unisonic Technologies |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |