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PDF MUN5135 Data sheet ( Hoja de datos )

Número de pieza MUN5135
Descripción Digital Transistors
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No Preview Available ! MUN5135 Hoja de datos, Descripción, Manual

MUN2135, MMUN2135L,
MUN5135, DTA123JE,
DTA123JM3, NSBA123JF3
Digital Transistors (BRT)
R1 = 2.2 kW, R2 = 47 kW
PNP Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base−emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Collector−Base Voltage
VCBO
50
Vdc
Collector−Emitter Voltage
VCEO
50
Vdc
Collector Current − Continuous
IC 100 mAdc
Input Forward Voltage
VIN(fwd)
12
Vdc
Input Reverse Voltage
VIN(rev)
5
Vdc
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
PIN CONNECTIONS
PIN 1
BASE
(INPUT)
R1
R2
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
MARKING DIAGRAMS
XX MG
G
1
SC−59
CASE 318D
STYLE 1
XXX MG
G
1
SOT−23
CASE 318
STYLE 6
XX MG
G
1
XX M
1
SC−70/SOT−323
CASE 419
STYLE 3
SC−75
CASE 463
STYLE 1
XX M
1
XM 1
SOT−723
CASE 631AA
STYLE 1
SOT−1123
CASE 524AA
STYLE 1
XXX
M
G
= Specific Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
See detailed ordering, marking, and shipping information in
the package dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 3
1
Publication Order Number:
DTA123J/D

1 page




MUN5135 pdf
MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3
TYPICAL CHARACTERISTICS
MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3
1
IC/IB = 10
25°C
150°C
0.1
−55°C
1000
100
10
25°C
VCE = 10 V
150°C
−55°C
0.01
0
7
6
5
4
3
2
1
0
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
Figure 2. VCE(sat) vs. IC
1
50 1
10
IC, COLLECTOR CURRENT (mA)
Figure 3. DC Current Gain
f = 10 kHz
IE = 0 A
TA = 25°C
100
150°C
10
1
0.1
−55°C
25°C
100
10 20 30 40
VR, REVERSE BIAS VOLTAGE (V)
Figure 4. Output Capacitance
10
0.01
0.001
50 0
VO = 5 V
1 23
Vin, INPUT VOLTAGE (V)
4
Figure 5. Output Current vs. Input Voltage
25°C
1 −55°C
150°C
0.1
0
VO = 0.2 V
10 20 30 40
IC, COLLECTOR CURRENT (mA)
50
Figure 6. Input Voltage vs. Output Current
www.onsemi.com
5

5 Page





MUN5135 arduino
MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3
PACKAGE DIMENSIONS
−X−
D
b1
3
−Y−
E
2X e
12
2X b
0.08 X Y
TOP VIEW
3X L
1
3X L2
BOTTOM VIEW
SOT−723
CASE 631AA
ISSUE D
A
HE
C
SIDE VIEW
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH. MINIMUM LEAD THICKNESS IS THE MINIMUM
THICKNESS OF BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS OR GATE BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 0.45 0.50 0.55
b 0.15 0.21 0.27
b1 0.25 0.31 0.37
C 0.07 0.12 0.17
D 1.15 1.20 1.25
E 0.75 0.80 0.85
e 0.40 BSC
H E 1.15 1.20 1.25
L 0.29 REF
L2 0.15 0.20 0.25
STYLE 1:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
RECOMMENDED
SOLDERING FOOTPRINT*
2X 0.27
2X
0.40
PACKAGE
OUTLINE
1.50
3X 0.52
0.36
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
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