Datasheet.kr   

RFMD2080 데이터시트 PDF




RF Micro Devices에서 제조한 전자 부품 RFMD2080은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 RFMD2080 자료 제공

부품번호 RFMD2080 기능
기능 45MHz TO 2700MHz IQ MODULATOR
제조업체 RF Micro Devices
로고 RF Micro Devices 로고


RFMD2080 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 19 페이지수

미리보기를 사용할 수 없습니다

RFMD2080 데이터시트, 핀배열, 회로
RFMD2080RFMD2080
45MHz TO 2700MHz IQ MODULATOR WITH
SYNTHESIZER/VCO AND BASEBAND INTERFACE
Package: QFN, 32-Pin, 5mm x 5mm
Features
RF Output Frequency Range
45MHz to 2700MHz
Fractional-N Synthesizer with
Very Low Spurious Levels
Typical Step Size 1.5Hz
Fully Integrated Wideband VCOs
and LO Buffers
Integrated Phase Noise
<0.2° rms at 1GHz
Integrated Baseband
Amplification Stage with Variable
Gain and Filtering
Tunable Baseband Filters Input
3dB Bandwidth from 1.5MHz to
10MHz
-45dBc Unadjusted Carrier
Suppression
-40dBc Unadjusted Sideband
Suppression
Very Low Noise Floor
-150dBm/Hz Typical
Output P1dB +4dBm
Output IP3 +18dBm
3.0V to 3.3V Power Supply
155mA Typical Current
Consumption
Serial Programming Interface
Applications
Satellite Communications
QPSK/QAM Modulators
SSB Modulators
Software Defined Radios
Phase
det .
Synth
Ref.
divider
Functional Block Diagram
Product Description
The RFMD2080 is a low power, highly integrated, IQ modulator with integrated fractional-N syn-
thesizer and voltage controlled oscillator (VCO). The RFMD2080 can generate output frequen-
cies of between 45MHz and 2700MHz, making it suitable for a wide range of applications.
The fractional-N synthesizer takes advantage of an advanced sigma-delta architecture that
delivers ultra-fine step sizes and low spurious products. The synthesizer/VCO combined with an
external loop filter allows the user to generate an oscillator signal covering 90MHz to 5400MHz.
The signal is buffered and routed to a high accuracy quadrature divider (/2) that drives the bal-
anced I and Q mixers. The output of the mixers are summed and applied to a differential RF out-
put stage. The device also features a differential input for an external VCO or LO source.
The baseband I and Q stages are highly integrated; featuring variable gain and filtering as well
as generation of DC offset voltages. The programmable DC offsets enable improved carrier sup-
pression. The baseband input 3dB bandwidth can be tuned from 1.5MHz to 10MHz, and the
total gain control range is 38dB with 2dB resolution.
Device programming is achieved via a simple 3-wire serial interface. In addition, a unique pro-
gramming mode allows up to four devices to be controlled from a common serial bus. This elim-
inates the need for separate chip-select control lines between each device and the host
controller. Up to six general purpose outputs are provided, which can be used to access internal
signals (the LOCK signal, for example) or to control front end components. The device is opti-
mized for low power operation, consuming typically only 155mA from a 3V supply.
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
LDMOS
DS140110
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2011, RF Micro Devices, Inc.
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 19




RFMD2080 pdf, 반도체, 판매, 대치품
RFMD2080
Pin Name
1 ENBL/GPO5
2 EXT_LO
3 EXT_LO_DEC
4 REXT
5 ANA_VDD1
6 LFILT1
7 LFILT2
8 LFILT3
9 MODE/GPO6
10 REF_IN
11 NC
12 TM
13 RF_OUT_N
14 RF_OUT_P
15 GPO1/ADD1
16 GPO2/ADD2
17 DIG_VDD
18 MOD_Q_N
19 MOD_Q_P
20 NC
21 NC
22 MOD_I_N
23 MOD_I_P
24 ANA_VDD2
25 GPO3
26 GPO4/LD/DO
27 NC
28 NC
29 RESETX
30 ENX
31 SCLK
32 SDATA
Exposed Paddles
Pin Names and Descriptions
Description
Device Enable pin (see note 1 and 2).
External local oscillator input. Use AC coupling capacitor.
Decoupling pin for external local oscillator. Use AC coupling capacitor.
External bandgap bias resistor (see note 3).
Analog supply. Use good RF decoupling.
Phase detector output. Low-frequency noise-sensitive node.
Loop filter op-amp output. Low-frequency noise-sensitive node.
VCO control input. Low-frequency noise-sensitive node.
Mode select pin (see notes 1 and 2).
Reference input. Use AC coupling capacitor.
Connect to ground.
Differential output (see note 5).
Differential output (see note 5).
General purpose output / MultiSlice address bit.
General purpose output / MultiSlice address bit.
Digital supply. Should be decoupled as close to the pin as possible.
Modulator Q differential input (see note 4).
Modulator Q differential input (see note 4).
Modulator I differential input (see note 4).
Modulator I differential input (see note 4).
Analog supply. Use good RF decoupling.
General purpose output
General purpose output / Lock detect output / serial data out.
Chip reset (active low). Connect to DIG_VDD if asynchronous reset is not required.
Serial interface select (active low) (See note 1).
Serial interface clock (See note 1).
Serial interface data (See note 1).
Ground reference, should be connected to PCB ground through a low impedance path.
Notes:
1. An RC low pass filter may be used on this line to reduce digital noise.
2. If the device is under software control this input can be configured as a general purpose output (GPO).
3. Connect a 51Kresistor from this pin to ground. This pin is sensitive to low frequency noise injection.
4. DC bias voltage and modulation should be applied to this pin.
5. This pin must be connected to ANA_VDD2 using an RF choke or center tapped transformer (see application schematic).
4 of 19
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS140110

4페이지










RFMD2080 전자부품, 판매, 대치품
RFMD2080
External Reference
The RFMD2080 has been designed to use an external reference such as a TCXO. The typical input will be a 0.8Vp-p clipped
sine wave, which should be AC-coupled into the reference input. When the PLL is not in use, it may be desirable to turn off the
internal reference circuits, by setting the REFSTBY bit low, to minimize current draw while in standby mode.
On cold start, or if REFSTBY is programmed low, the TCXO will need a warm-up period. This is set by the SU_WAIT bits. This will
allow the clock to be stable and immediately available when the ENBL bit is asserted high, allowing the PLL to assume normal
operation.
If the current consumption of the reference circuits in standby mode, typically 2mA, is not critical, then the REFSTBY bit can be
set high. This allows the fastest startup and lock time after ENBL is taken high.
IQ Modulator
The IQ modulator core of the RFMD2080 is wideband covering from 45MHz to 2700MHz. It has been designed to achieve
exceptional linearity for the amount of DC power consumed.
The modulator mixer cores have four coarse gain/current settings. Each setting steps the gain and linearity by 6dB and can be
used to optimize performance or reduce power consumption. The best linearity is achieved using the modulator bias setting
MODDC=4. This setting adjusts bias mixer current and can be used to trade off linearity and current consumption.
The modulator output is differential and requires a balun and simple matching circuit optimized to the specific application fre-
quencies. The modulator output pins are also used to source current for the modulator mixer circuits, about 10mA on each pin.
This is usually via a center-tapped balun or by RF chokes in the external matching circuitry to the supply. The modulator output
is high impedance, consisting of approximately 2Kresistance in parallel with some capacitance, approximately 1pF. The
modulator output does not require a conjugate matching network. It is a constant current output which will drive a real differ-
ential load of typically 200. Since the mixer output is a constant current source, a higher resistance load will give higher out-
put power and gain. A shunt inductor can be used to resonate with the mixer output capacitance at the frequency of interest.
This inductor may not be required at lower frequencies where the impedance of the output capacitance is less significant. At
higher output frequencies the inductance of the bond wires (about 0.5nH on each pin) becomes more significant.
The following diagram is a simple model of the modulator output:
0.5nH
1K
1K
1pF
0.5nH
RFMD2080
RF Output
It is recommended to use a 4:1 balun on the modulator output, presenting 200to the output in a single ended 50system.
The RFMD2080 evaluation board has an RFXF8553 wideband transmission line transformer.
Baseband Section
The RFMD2080 features a baseband section that consists of an active low pass filter, variable attenuator and DC offset con-
trol circuitry. DC offset calibration is performed using digital-to-analog converters (DACs) that apply an offset voltage to various
parts of the circuit to compensate for DC offsets introduced by the internal buffers and the mixer core. This can be done to opti-
mize LO suppression by setting registers to program the DAC offset voltages.
DS140110
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
7 of 19

7페이지


구       성 총 19 페이지수
다운로드[ RFMD2080.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
RFMD2080

45MHz TO 2700MHz IQ MODULATOR

RF Micro Devices
RF Micro Devices
RFMD2080

IQ MODULATOR

RF Micro Devices
RF Micro Devices

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵