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부품번호 | KF4N60I 기능 |
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기능 | N CHANNEL MOS FIELD EFFECT TRANSISTOR | ||
제조업체 | KEC | ||
로고 | |||
SEMICONDUCTOR
TECHNICAL DATA
KF4N60D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for electronic ballast and
switching mode power supplies.
FEATURES
VDSS= 600V, ID= 3.2A
Drain-Source ON Resistance : RDS(ON)=2.5
Qg(typ) = 10nC
@VGS = 10V
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
600
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
3.2
2.0
12*
130
3.3
4.5
59.5
0.48
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj 150
Tstg -55 150
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
2.1
110
* : Drain current limited by maximum junction temperature.
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
PIN CONNECTION
D
KF4N60D
A
CD
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
123
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
KF4N60I
AH
CJ
M
N
G
FF
123
P
L
1. GATE
2. DRAIN
3. SOURCE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
P
MILLIMETERS
6.6 +_ 0.2
6.1 +_ 0.2
5.34 +_0.3
0.7 +_ 0.2
9.3 +_0.3
2.3+_ 0.2
0.76 +_ 0.1
2.3 +_ 0.1
0.5+_ 0.1
1.8 +_ 0.2
0.5 +_ 0.1
1.0 +_ 0.1
0.96 MAX
1.02 +_ 0.3
IPAK(1)
G
S
2013. 8. 05
Revision No : 0
1/6
KF4N60D/I
104
103
102
101
100
0
Fig 7. C - VDS
Ciss
Coss
Crss
10 20 30
Drain - Source Voltage VDS (V)
40
Fig 8. Qg- VGS
12
ID=4A
10
VDS = 480V
8
6
4
2
0
0 2 4 6 8 10 12 14 16
Gate - Charge Qg (nC)
Fig9. Safe Operation Area
102
101
100
10-1
Operation in this
area is limited by RDS(ON)
Tc= 25 C
Tj = 150 C
102 Single pulse
100
101
102
Drain - Source Voltage VDS (V)
10µs
100µs
1ms
10ms
DC
103
Fig10. ID - Tj
6
5
4
3
2
1
0
0 25 50 75 100 125 150
Junction Temperature Tj ( C)
Fig11. Transient Thermal Response Curve
2013. 8. 05
Duty=0.5
100
0.2
0.1
0.05
10-1 0.02
0.01
Single Pulse
10-2
10-5
10-4
10-3 10-2
PDM
t1
t2
- Duty Factor, D= t1/t2
Tj(max) - Tc
- RthJC =
PD
10-1 100 101
Revision No : 0
4/6
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부품번호 | 상세설명 및 기능 | 제조사 |
KF4N60D | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
KF4N60F | N CHANNEL MOS FIELD EFFECT TRANSISTOR | KEC |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |