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AUIRLB3036 데이터시트 PDF




International Rectifier에서 제조한 전자 부품 AUIRLB3036은 전자 산업 및 응용 분야에서
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부품번호 AUIRLB3036 기능
기능 Power MOSFET ( Transistor )
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AUIRLB3036 데이터시트, 핀배열, 회로
AUTOMOTIVE GRADE
AUIRLB3036
Features
l Advanced Process Technology
l Ultra Low On-Resistance
l Logic Level Gate Drive
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Compliant
l Automotive Qualified *
HEXFET® Power MOSFET
D VDSS
60V
RDS(on) typ.
1.9mΩ
cmax. 2.4mΩ
G
ID (Silicon Limited)
270A
S ID (Package Limited)
195A
D
Description
Specifically designed for Automotive applications, this HEXFET® Power
MOSFET utilizes the latest processing techniques to achieve extremely
low on-resistance per silicon area. Additional features of this design
are a 175°C junction operating temperature, fast switching speed and
improved repetitive avalanche rating . These features combine to make
this design an extremely efficient and reliable device for use in Automotive
applications and a wide variety of other applications.
G
Gate
DS
G
TO-220AB
AUIRLB3036
D
Drain
S
Source
Base Part Number
AUIRLB3036
Package Type
TO-220
Standard Pack
Form
Quantity
Tube
50
Orderable Part Number
AUIRLB3036
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
dPulsed Drain Current
Maximum Power Dissipation
Max.
c270
190
195
1100
380
Units
A
W
Linear Derating Factor
2.5 W/°C
VGS
EAS
IAR
EAR
dv/dt
Gate-to-Source Voltage
eSingle Pulse Avalanche Energy (Thermally Limited)
dAvalanche Current
dRepetitive Avalanche Energy
fPeak Diode Recovery
±16
290
See Fig. 14, 15, 22a, 22b
8.0
V
mJ
A
mJ
V/ns
TJ
TSTG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
-55 to + 175
300
x x10lbf in (1.1N m)
°C
Thermal Resistance
Symbol
RθJC
RθCS
RθJA
Parameter
kJunction-to-Case
Case-to-Sink, Flat, Greased Surface
jJunction-to-Ambient (PCB Mount)
Typ.
–––
0.50
–––
Max.
0.40
–––
62
Units
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
April 08, 2014




AUIRLB3036 pdf, 반도체, 판매, 대치품
1000
100 TJ = 175°C
10 TJ = 25°C
1
VGS = 0V
0.1
0.0 0.5 1.0 1.5 2.0
VSD, Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
2.5
300
250 Limited By Package
200
150
100
50
0
25 50 75 100 125 150
Fig 9. MaxTimC u, CmasDerTaeinmpCeurartruerentvCs).
Case Temperature
3.0
175
2.5
2.0
1.5
1.0
0.5
0.0
-10 0 10 20 30 40 50 60 70
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
4 www.irf.com © 2014 International Rectifier
AUIRLB3036
10000
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100μsec
1msec
100
Limited by
package
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
01
10msec
DC
10
100
VDS, Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
75
Id = 5mA
70
65
60
55
-60 -40 -20 0 20 40 60 80 100120140160180
TJ , Temperature ( °C )
Fig 10. Drain-to-Source Breakdown Voltage
1200
1000
800
ID
TOP 27A
50A
BOTTOM 165A
600
400
200
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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April 08, 2014

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AUIRLB3036 전자부품, 판매, 대치품
AUIRLB3036
+
‚
-

RG
D.U.T
+
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
ƒ Circuit Layout Considerations
Low Stray Inductance
-
Ground Plane
Low Leakage Inductance
Current Transformer
-„ +
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
dv/dt controlled by RG
Driver same type as D.U.T.
VDD
+
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
-
Re-Applied
Voltage
Body Diode
IInndduucctor CCuurerrnetnt
Forward Drop
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
*VGS=10V
VDD
ISD
V(BR)DSS
15V tp
VDS
L
DRIVER
RG
2V0GVS
tp
D.U.T
IAS
0.01Ω
+
-
VDD
A
Fig 22a. Unclamped Inductive Test Circuit
VDS
RD
VGS
RG
D.U.T.
+
-
VDD
V1G0SV
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 23a. Switching Time Test Circuit
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2μF
.3μF
D.U.T.
+
-VDS
VGS
3mA
IG ID
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
7 www.irf.com © 2014 International Rectifier
IAS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
10%
VGS
td(on) tr
td(off) tf
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
Vgs(th)
Qgs1 Qgs2 Qgd
Qgodr
Fig 24b. Gate Charge Waveform
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AUIRLB3036

Power MOSFET ( Transistor )

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