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Datasheet BUJ303CD Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | BUJ303CD | NPN power transistor BUJ303CD
NPN power transistor
8 November 2012
Product data sheet
1. Product profile
1.1 General description
High voltage high speed planar passivated NPN power switching transistor in a SOT428 (DPAK) surface mountable plastic package.
1.2 Features and benefits • Fast switching • Low thermal | NXP Semiconductors | transistor |
BUJ Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | BUJ100 | Silicon Diffused Power Transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BUJ100 Silicon Diffused Power Transistor
Product specification
September 1999
NXP Semiconductors
Silicon Diffused Power Transistor
Product specification
BUJ100
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in th NXP Semiconductors transistor | | |
2 | BUJ100AT | Silicon Diffused Power Transistor Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ100AT
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the SOT223 envelope intended for use in compact fluorescent lamps, low power electronic lighting ballasts and s NXP Semiconductors transistor | | |
3 | BUJ100LR | Silicon diffused power transistor BUJ100LR
Silicon diffused power transistor
Rev. 01 — 12 August 2009 Product data sheet
www.DataSheet4U.c
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor in a SOT54 (TO-92) 3 leads plastic package.
1.2 Features and benefits
NXP Semiconductors transistor | | |
4 | BUJ101A | Silicon Diffused Power Transistor Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ101A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inve NXP Semiconductors transistor | | |
5 | BUJ101AU | Silicon Diffused Power Transistor Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ101AU
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in the I-PAK / SOT533 envelope intended for use in high frequency electronic lighting ballast applications, conver NXP Semiconductors transistor | | |
6 | BUJ101AX | Silicon Diffused Power Transistor Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BUJ101AX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications, con NXP Semiconductors transistor | | |
7 | BUJ103 | Silicon Diffused Power Transistor DISCRETE SEMICONDUCTORS
DATA SHEET
BUJ103A Silicon Diffused Power Transistor
Product specification August 1998
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
GENERAL DESCRIPTION
BUJ103A
High-voltage, high-speed planar-passivated npn power switching transistor NXP Semiconductors transistor | |
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