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부품번호 | BUJD203AD 기능 |
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기능 | NPN power transistor | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 15 페이지수
BUJD203AD
NPN power transistor with integrated diode
Rev. 01 — 27 September 2010
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT428 (DPAK) surface-mountable plastic
package.
1.2 Features and benefits
Fast switching
High voltage capability
Integrated anti-parallel E-C diode
Surface-mountable package
Very low switching and conduction
losses
1.3 Applications
DC-to-DC converters
Electronic lighting ballasts
Inverters
Motor control systems
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
IC collector current see Figure 1; see Figure 2; DC;
see Figure 4
Ptot total power
dissipation
see Figure 3; Tmb ≤ 25 °C
VCESM
collector-emitter
peak voltage
VBE = 0 V
Static characteristics
hFE
DC current gain
IC = 500 mA; VCE = 5 V;
see Figure 12; Tmb = 25 °C
VCE = 5 V; IC = 3 A; Tmb = 25 °C;
see Figure 12
VCEOsus
collector-emitter
IB = 0 A; LC = 25 mH; IC = 10 mA;
sustaining voltage see Figure 7; see Figure 8
Min Typ Max Unit
- - 4A
- - 80 W
- - 850 V
13 21 32
- 12.5 -
400 450 -
V
NXP Semiconductors
BUJD203AD
NPN power transistor with integrated diode
102
IC
(A)
ICM(ma1x0)
IC(max)
1
10−1
001aac001
duty cycle = 0.01
II(3) tp = 20 μs
(1)
50 μs
100 μs
200 μs
(2) 500 μs
DC
10−2
I(3)
10−3
1
10
Fig 4.
1)Ptot maximum and Ptot peak maximum lines
2)Second breakdown limits
3) I = Region of permissable DC operation
II = Extension for repetitive pulse operation
III = Extension during turn-on in single transistor converters
provided that RBE ≤ 100 Ω and tp ≤ 0.6 μs
Forward bias safe operating area for Tmb ≤ 25 °C
102
III(3)
VCEclamp (V)
103
BUJD203AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 September 2010
© NXP B.V. 2010. All rights reserved.
4 of 15
4페이지 NXP Semiconductors
BUJD203AD
NPN power transistor with integrated diode
6V
30 Hz to 60 Hz
300 Ω
50 V
100 Ω to 200 Ω
horizontal
oscilloscope
vertical
1Ω
001aab987
Fig 7. Test circuit for collector-emitter sustaining
voltage
2.0
VCEsat
(V)
1.6
IC = 1 A 2 A 3 A
4A
001aab995
1.2
0.8
0.4
0
10−2
10−1
1 10
IB (A)
IC
(mA)
250
100
10
0
min VCE (V)
VCEOsus
001aab988
Fig 8. Oscilloscope display for collector-emitter
sustaining voltage test waveform
VCEsat
(V) 0.5
001aab997
0.4
0.3
0.2
0.1
0
10−1
1 10
IC (A)
Fig 9. Collector-emitter saturation voltage as a
function of base current; typical values
Fig 10. Collector-emitter saturation voltage as a
function of collector current; typical values
BUJD203AD
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 September 2010
© NXP B.V. 2010. All rights reserved.
7 of 15
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부품번호 | 상세설명 및 기능 | 제조사 |
BUJD203A | NPN power transistor | NXP Semiconductors |
BUJD203AD | NPN power transistor | NXP Semiconductors |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |