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PDF BUJD203AX Data sheet ( Hoja de datos )
| Número de pieza | BUJD203AX | |
| Descripción | NPN power transistor | |
| Fabricantes | NXP Semiconductors | |
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BUJD203AX
NPN power transistor with integrated diode
Rev. 01 — 27 September 2010
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT186A (TO220F) full pack plastic package.
1.2 Features and benefits
Fast switching
High voltage capability
Integrated anti-parallel E-C diode
Isolated package
Very low switching and conduction
losses
1.3 Applications
DC-to-DC converters
Electronic lighting ballasts
Inverters
Motor control systems
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
IC collector current see Figure 1; see Figure 2; DC;
see Figure 4
Ptot total power Th ≤ 25 °C; see Figure 3
dissipation
VCESM
collector-emitter
peak voltage
VBE = 0 V
Static characteristics
hFE
VCEOsus
DC current gain
collector-emitter
sustaining voltage
IC = 500 mA; VCE = 5 V;
see Figure 11; Th = 25 °C
VCE = 5 V; IC = 3 A; see Figure 11;
Th = 25 °C
IB = 0 A; LC = 25 mH; IC = 10 mA;
see Figure 6; see Figure 7
Min Typ Max Unit
- - 4A
- - 26 W
- - 850 V
13 21 32
- 12.5 -
400 450 -
V
1 page  
NXP Semiconductors
BUJD203AX
NPN power transistor with integrated diode
5. Thermal characteristics
Table 5.
Symbol
Rth(j-h)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to heatsink
thermal resistance from
junction to ambient
Conditions
with heatsink compound; see Figure 5
in free air
Min Typ Max Unit
- - 4.8 K/W
- 55 - K/W
10
Zth(j-h)
(K/W)
1
δ = 0.5
0.2
0.1
0.05
10−1 0.02
001aag169
P
tp
δ=
1/f
10−2 0
10−3
10−6
10−5
10−4
10−3
10−2
tp
1/f
10−1 1
t
10 102
tp (s)
Fig 5. Transient thermal impedance from junction to heatsink as a function of pulse duration
6. Isolation characteristics
Table 6.
Symbol
Visol(RMS)
Cisol
Isolation characteristics
Parameter
RMS isolation voltage
isolation capacitance
Conditions
50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %; Th = 25 °C;
from all terminals to external heatsink; clean
and dust free
Th = 25 °C; f = 1 MHz; from collector to
external heatsink
Min Typ Max Unit
- - 2500 V
- 10 - pF
BUJD203AX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 September 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
9. Revision history
Table 8. Revision history
Document ID
Release date
BUJD203AX v.1
20100927
BUJD203AX
NPN power transistor with integrated diode
Data sheet status
Product data sheet
Change notice
-
Supersedes
-
BUJD203AX
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 27 September 2010
© NXP B.V. 2010. All rights reserved.
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