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PDF BUJD203A Data sheet ( Hoja de datos )
| Número de pieza | BUJD203A | |
| Descripción | NPN power transistor | |
| Fabricantes | NXP Semiconductors | |
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BUJD203A
NPN power transistor with integrated diode
Rev. 02 — 2 December 2010
Product data sheet
1. Product profile
1.1 General description
High voltage, high speed, planar passivated NPN power switching transistor with
integrated anti-parallel E-C diode in a SOT78 (TO220AB) plastic package.
1.2 Features and benefits
Fast switching
High voltage capability
Integrated anti-parallel E-C diode
Very low switching and conduction
losses
1.3 Applications
DC-to-DC converters
Electronic lighting ballasts
Inverters
Motor control systems
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
IC collector current see Figure 1; see Figure 2; DC;
see Figure 4
Ptot
total power
see Figure 3; Tmb ≤ 25 °C
dissipation
VCESM
collector-emitter VBE = 0 V
peak voltage
Static characteristics
hFE
VCEOsus
DC current gain IC = 500 mA; VCE = 5 V;
see Figure 11; Tj = 25 °C
VCE = 5 V; IC = 3 A;
Tmb = 25 °C; see Figure 11
collector-emitter IB = 0 A; LC = 25 mH;
sustaining voltage IC = 10 mA; see Figure 6;
see Figure 7
Min Typ Max Unit
- - 4A
- - 80 W
- - 850 V
13 21 32
- 12.5 -
400 450 -
V
1 page  
NXP Semiconductors
BUJD203A
NPN power transistor with integrated diode
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
mounting base
thermal resistance
from junction to
ambient
Conditions
see Figure 5
in free air
Min Typ Max Unit
- - 1.56 K/W
- 60 - K/W
10 001aab998
Zth(j-mb)
(K/W)
1 δ = 0.5
10−1
0.2
0.1
0.05
0.02
0.01
Ptot
δ = tp
T
10−2
10−5
10−4
10−3
10−2
10−1
tp
T
t
1
tp (s)
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse width
10
BUJD203A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 2 December 2010
© NXP B.V. 2010. All rights reserved.
5 of 14
5 Page 
NXP Semiconductors
BUJD203A
NPN power transistor with integrated diode
8. Revision history
Table 7. Revision history
Document ID
Release date
Data sheet status
Change notice
BUJD203A v.2
Modifications:
20101202
Product data sheet
-
• Data sheet status changed from Preliminary to Product.
BUJD203A v.1
20100909
Preliminary data sheet -
Supersedes
BUJD203A v.1
-
BUJD203A
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 2 December 2010
© NXP B.V. 2010. All rights reserved.
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