(PDF) KDV269E Datasheet - SILICON EPITAXIAL PLANAR DIODE

Número de pieza	KDV269E
Descripción	SILICON EPITAXIAL PLANAR DIODE
Fabricantes	KEC
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No Preview Available ! SEMICONDUCTOR TECHNICAL DATA CATV TUNING. FEATURES High Capacitance Ratio : C2V/C25V=11.0(Min.) Low Series Resistance : rS=0.75 (Max.) Excellent C-V Characteristics, and Small Tracking Error. Useful for Small Size Tuner. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature VR Tj Storage Temperature Range Tstg RATING 34 125 -55 125 UNIT V KDV269E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE C 1 2 D 1. ANODE 2. CATHODE E F DIM A B C D E F G MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.10 ESC ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Current IR Capacitance C2V Capacitance C25V Capacitance Ratio C2V/C25V Series Resistance rS Note : Available in matched group for capacitance to 2.0%. C(Max.)-C(Min.) 0.02 C(Min.) (VR=2~25V) TEST CONDITION VR=28V VR=2V, f=1MHz VR=25V, f=1MHz VR=5V, f=470MHz MIN. - 29 2.5 11.0 - TYP. - 31.5 2.75 11.5 - MAX. 10 34 2.9 - 0.75 UNIT nA pF pF - Marking Type Name UR 2014. 3. 31 Revision No : 3 1/2 1 page

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PDF KDV269E Data sheet ( Hoja de datos )