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부품번호 | HFT1N60F 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | SemiHow | ||
로고 | |||
May 2015
HFT1N60F
600V N-Channel MOSFET
BVDSS = 600 V
RDS(on) typ ȍ
ID = 1 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 3.7 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ7\S#9GS=10V
100% Avalanche Tested
SOT-223
2
3
1
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
VDSS
ID
IDM
VGS
EAS
IAR
EAR
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25)
– Continuous (TC = 100)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TC = 25)
- Derate above 25
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Value
600
1*
0.6 *
4*
ρ30
33
1
0.2
2.1
0.02
-55 to +150
300
* Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
A
mJ
W
W/
Thermal Resistance Characteristics
Symbol
RșJA
Parameter
Junction-to-Ambient *
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
Max.
60
Units
/W
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΪ͑ͣͦ͑͢͡
Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
Note :
1. VGS = 0 V
2. I = 250PA
D
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Figure 7. Breakdown Voltage Variation
vs Temperature
101 Operation in This Area
is Limited by R DS(on)
10 Ps
100
100 Ps
1 ms
10 ms
100 ms
10-1 1 s
DC
10-2
10-3
100
* Notes :
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VVDS,, DDrraaiinn--SSoouurrcceeVVooltltaaggee[[VV]]
103
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
Note :
1. VGS = 10 V
2. ID = 0.5 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
1.0
0.8
0.6
0.4
0.2
0.0
25 50 75 100 125
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
150
102
D=0.5
101 0.2
0.1
0.05
0.02
100
0.01
10-1
10-5
10-4
* Notes :
1. ZTJL(t) = 60 oC/W Max.
2. Duty Factor, D=t /t
12
3. TJM - TL = PDM * ZTJL(t)
PDM
single pulse
t1
t2
10-3
10-2
10-1
100
101
102
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
103
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4페이지 Package Dimension
zv{TYYZG
Symbol
A
C
D
E
I
H
B
J
1
2
3
4
5
Dimension [mm]
Reference Tolerance
7 ρ0.3
3 ρ0.1
0.06 ρ0.04
5Û ρ5Û
0.7 ρ0.1
0.3 ρ0.05
13Û7<3
2.3 REF.
6.5 ρ0.2
6.5 ρ0.2
3.5 ρ0.2
3.5 ρ0.2
1.6 ρ0.2
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͡͝;ΒΪ͑ͣͦ͑͢͡
7페이지 | |||
구 성 | 총 7 페이지수 | ||
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HFT1N60F | N-Channel MOSFET | SemiHow |
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |