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PDF HFU2N90 Data sheet ( Hoja de datos )
| Número de pieza | HFU2N90 | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | SemiHow | |
| Logotipo |  |
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Feb 2014
HFD2N90/HFU2N90
900V N-Channel MOSFET
BVDSS = 900 V
RDS(on) typ ȍ
ID = 2.0 A
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Robust Gate Oxide Technology
Very Low Intrinsic Capacitances
Excellent Switching Characteristics
Unrivalled Gate Charge : 17 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) ȍ 7\S #9GS=10V
100% Avalanche Tested
D-PAK I-PAK
2
1
3
HFD2N90
1
2
3
HFU2N90
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25 unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25ఁ͚͑
– Continuous (TC = 100ఁ͚͑
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
900
2.0
1.3
8.0
ρ30
170
2.0
7.0
4.5
PD
TJ, TSTG
TL
Power Dissipation (TA = 25ఁ) *
Power Dissipation (TC = 25ఁ͚͑
͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͑͞͵ΖΣΒΥΖ͑ΒΓΠΧΖ͑ͣͦఁ͑
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
2.5
70
0.56
-55 to +150
300
Units
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/ఁ͑
ఁ͑
ఁ͑
Thermal Resistance Characteristics
Symbol
Parameter
RșJC Junction-to-Case
RșJA Junction-to-Ambient*
RșJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.78
50
110
Units
ఁ͠Έ͑
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͷΖΓ͑ͣͥ͑͢͡
1 page  
Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VGS = 0 V
2. ID ȝ $
-50 0
50 100 150
TJ, Junction Temperature [oC]
200
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
101
100 Ps
1 ms
100 10 ms
DC
10-1
10-2
100
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. TC = 25 oC
2. TJ = 150 oC
3. Single Pulse
101 102
VDS, Drain-Source Voltage [V]
103
Figure 9. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-100
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. VGS = 10 V
2. ID = 1.5 A
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
3.0
2.5
2.0
1.5
1.0
0.5
0.0
25 50 75 100 125 150
TC, Case Temperature [ 䉝㼉
Figure 10. Maximum Drain Current
vs Case Temperature
100 D=0.5
0.2
0.1
0.05
10-1
0.02
0.01
10-2
10-5
䈜㻌㻺㼛㼠㼑㼟㻌㻦
1. Zș -&(t) = 1.78 䉝㻛㼃 㻌㻹㼍㼤㻚
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * Zș -&(t)
single pulse
PDM
t1
t2
10-4
10-3
10-2
10-1
100
t1, Square Wave Pulse Duration [sec]
101
Figure 11. Transient Thermal Response Curve
క͑΄Ͷ;ͺΈ͑Ͷ·͟Ͳ͑͢͝ͷΖΓ͑ͣͥ͑͢͡
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet HFU2N90.PDF ] | |
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