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PDF HGA40N120FV Data sheet ( Hoja de datos )
| Número de pieza | HGA40N120FV | |
| Descripción | N-Channel MOSFET | |
| Fabricantes | SemiHow | |
| Logotipo |  |
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HGA40N120FV
1200V Field Stop Trench IGBT
FEATURES
1200V Field Stop Trench Technology
Low Saturation Voltage
High Switching Frequency
Very Soft, Fast Recovery Anti-parallel diode
APPLICATION
Welding Converters
Uninterruptible Power Supply
General Purpose Inverters
March 2015
VCES = 1200 V
IC = 40 A
VCE(sat) typ = 2.0 V
TO-247
GC E
Absolute Maximum Ratings
Symbol
VCES
IC
ICM
IF
IFM
VGES
PD
TJ, TSTG
TL
Parameter
Collector-Emitter Voltage
Collector Current
Collector Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
Collector Current
– Pulsed
(Note 1)
Diode Forward Current – Continuous (TC = 100℃)
Diode Maximum Forward Current
Gate-Emitter Voltage
Power Dissipation
Power Dissipation
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Notes:
1. Pulse width limited by max junction temperature
Thermal Resistance Characteristics
Symbol
RθJC(IGBT)
RθJC(Diode)
RθJA
Parameter
Junction-to-Case
Junction-to-Case
Junction-to-Ambient
Value
1200
64
40
160
20
60
±20
400
160
-55 to +150
300
Typ.
--
--
--
Max.
0.31
1.11
40
Units
V
A
A
A
A
A
V
W
W
℃
℃
Units
℃/W
◎ SEMIHOW REV.A0,May 2014
1 page  
IGBT Characteristics
Figure 7. Capacitance Characteristics
Figure 8. Turn-On Characteristics vs.
Gate Resistance
Figure 9. Turn-Off Characteristics vs.
Gate Resistance
Figure 10. Switching Loss vs. Gate Resistance
Figure 11. Turn-On Characteristics vs.
Collector Current
Figure 12. Turn-Off Characteristics vs.
Collector Current
◎ SEMIHOW REV.A0,May 2014
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet HGA40N120FV.PDF ] | |
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