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부품번호 | HRU180N10K 기능 |
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기능 | N-Channel MOSFET | ||
제조업체 | SemiHow | ||
로고 | |||
HRD180N10K / HRU180N10K
100V N-Channel Trench MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Excellent Switching Characteristics
Unrivalled Gate Charge : 85 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 15 mΩ (Typ.) @VGS=10V
100% Avalanche Tested
December 2014
BVDSS = 100 V
RDS(on) typ =15 mΩ
ID = 65 A
D-PAK I-PAK
2
1
3
HRD180N10K
1
2
3
HRU180N10K
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TA = 25℃)*
Power Dissipation (TC = 25℃)
- Derate above 25℃
100
65 *
46 *
180 *
±25
170
13.3
3
133
0.89
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +175
300
* Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
mJ
W
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient*
RθJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
1.1
50
110
Units
℃/W
◎ SEMIHOW REV.A0,December 2014
Typical Characteristics (continued)
1.2
1.1
1.0
0.9
0.8
-100
∗ Note :
1. VGS = 0 V
2. ID = 250µA
-50 0 50 100 150
T , Junction Temperature [oC]
J
200
Figure 7. Breakdown Voltage Variation
vs Temperature
Operation in This Area
is Limited by R DS(on)
102 100 µs
1 ms
10 ms
101 DC
100
10-1
10-1
* Notes :
1. TC = 25 oC
2. T = 175 oC
J
3. Single Pulse
100 101
VDS, Drain-Source Voltage [V]
102
Figure 9. Maximum Safe Operating Area
2.5
2.0
1.5
1.0
0.5
0.0
-100
∗ Note :
1. VGS = 10 V
2. I = 30 A
D
-50 0 50 100 150
TJ, Junction Temperature [oC]
200
Figure 8. On-Resistance Variation
vs Temperature
80
60
40
20
0
25 50 75 100 125 150
TC, Case Temperature [oC]
Figure 10. Maximum Drain Current
vs Case Temperature
175
100
D=0.5
0.2
10-1
0.1
0.05
0.02
0.01
10-2
10-5
* Notes :
1. ZθJC(t) = 1.1 oC/W Max.
2. Duty Factor, D=t1/t2
3. TJM - TC = PDM * ZθJC(t)
single pulse
PDM
t1
t2
10-4
10-3
10-2
10-1
100
t1, Square Wave Pulse Duration [sec]
Figure 11. Transient Thermal Response Curve
101
◎ SEMIHOW REV.A0,December 2014
4페이지 Package Dimension
TO-252
(Ass’y GZSM)
◎ SEMIHOW REV.A0,December 2014
7페이지 | |||
구 성 | 총 9 페이지수 | ||
다운로드 | [ HRU180N10K.PDF 데이터시트 ] |
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부품번호 | 상세설명 및 기능 | 제조사 |
HRU180N10K | N-Channel MOSFET | SemiHow |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |