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Número de pieza | HRU80N06K | |
Descripción | N-Channel MOSFET | |
Fabricantes | SemiHow | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de HRU80N06K (archivo pdf) en la parte inferior de esta página. Total 9 Páginas | ||
No Preview Available ! HRD80N06K / HRU80N06K
60V N-Channel Trench MOSFET
FEATURES
Originative New Design
Superior Avalanche Rugged Technology
Excellent Switching Characteristics
Unrivalled Gate Charge : 90 nC (Typ.)
Extended Safe Operating Area
Lower RDS(ON) : 6.3 mΩ (Typ.) @VGS=10V
100% Avalanche Tested
December 2014
BVDSS = 60 V
RDS(on) typ = 6.3mΩ
ID = 114 A
D-PAK I-PAK
2
1
3
HRD80N06K
1
2
3
HRU80N06K
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings TC=25℃ unless otherwise specified
Symbol
Parameter
Value
VDSS
ID
IDM
VGS
EAS
EAR
PD
Drain-Source Voltage
Drain Current
Drain Current
Drain Current
– Continuous (TC = 25℃)
– Continuous (TC = 100℃)
– Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation (TA = 25℃)*
Power Dissipation (TC = 25℃)
- Derate above 25℃
60
114 *
80 *
400 *
±25
340
16
3
160
1.07
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
-55 to +175
300
* Drain current limited by maximum junction temperature
Units
V
A
A
A
V
mJ
mJ
W
W
W/℃
℃
℃
Thermal Resistance Characteristics
Symbol
Parameter
RθJC
Junction-to-Case
RθJA Junction-to-Ambient*
RθJA Junction-to-Ambient
* When mounted on the minimum pad size recommended (PCB Mount)
Typ.
--
--
--
Max.
0.9
50
110
Units
℃/W
◎ SEMIHOW REV.A0,December 2014
1 page Fig 12. Gate Charge Test Circuit & Waveform
Same Type
50KΩ as DUT
12V 200nF
300nF
VGS
10V
Qg
VGS
VDS
Qgs Qgd
DUT
3mA
Charge
10V
10V
Fig 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDD
( 0.5 rated VDS )
DUT
VDS
90%
10%
Vin
td(on)
tr
t on
td(off)
tf
t off
Fig 14. Unclamped Inductive Switching Test Circuit & Waveforms
VDS
ID
RG
L
VDD
EAS =
--1--
2
LL IAS2
BVDSS
--------------------
BVDSS -- VDD
BVDSS
IAS
ID (t)
DUT
VDD
VDS (t)
t p Time
◎ SEMIHOW REV.A0,December 2014
5 Page |
Páginas | Total 9 Páginas | |
PDF Descargar | [ Datasheet HRU80N06K.PDF ] |
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HRU80N06K | N-Channel MOSFET | SemiHow |
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