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Datasheet 2N6059 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | 2N6059 | COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 2N6050 2N6051 2N6052 PNP 2N6057 2N6058 2N6059 NPN
COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6050, 2N6057 series types are complementary silicon Darlington power transistors, manufactured by the epitaxial base pro | Central Semiconductor | transistor |
2 | 2N6059 | SILICON NPN POWER DARLINGTON TRANSISTOR 2N6059
SILICON NPN POWER DARLINGTON TRANSISTOR
s s s s s s
SGS-THOMSON PREFERRED SALESTYPE HIGH GAIN NPN DARLINGTON HIGH CURRENT HIGH DISSIPATION INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N6059 is a silicon epitaxial-b | STMicroelectronics | transistor |
3 | 2N6059 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS
ON Semiconductort PNP
Darlington Complementary Silicon Power Transistors
. . . designed for general−purpose amplifier and low frequency switching applications.
2N6052*
NPN
• High DC Current Gain — • • w
hFE = 3500 (Typ) @ IC = 5.0 Adc Collector−Emitter Sustaining | ON Semiconductor | transistor |
4 | 2N6059 | POWER TRANSISTORS(12A/150W) A
A
A
A
| Mospec Semiconductor | transistor |
5 | 2N6059 | DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS | Boca Semiconductor Corporation | transistor |
2N6 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | 2N60 | N-CHANNEL MOSFET
UNISONIC TECHNOLOGIES CO., LTD 2N60
2 Amps, 600 Volts N-CHANNEL MOSFET
DESCRIPTION
The UTC 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche charact Unisonic Technologies mosfet | | |
2 | 2N60-E | N-CHANNEL POWER MOSFET UNISONIC TECHNOLOGIES CO., LTD
2N60-E
2A, 600V N-CHANNEL POWER MOSFET
DESCRIPTION
The UTC 2N60-E is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. Unisonic Technologies mosfet | | |
3 | 2N6008 | Series 2N Transistors Sprague transistor | | |
4 | 2N6009 | Series 2N Transistors Sprague transistor | | |
5 | 2N6010 | Silicon Transistors Semiconductor transistor | | |
6 | 2N6027 | SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS 2N6027 2N6028
SILICON PROGRAMMABLE UNIJUNCTION TRANSISTORS
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DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6027 and 2N6028 devices are silicon programmable unijunction transistors, manufactured in an epoxy molded package, designed for adjustable (programmable) characte Central Semiconductor transistor | | |
7 | 2N6027 | Programmable Unijunction Transistor 2N6027, 2N6028
Preferred Device
Programmable Unijunction Transistor
Programmable Unijunction Transistor Triggers
Designed to enable the engineer to “program’’ unijunction characteristics such as RBB, h, IV, and IP by merely selecting two resistor values. Application includes thyristor−trigge ON Semiconductor transistor | |
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Número de pieza | Descripción | Fabricantes | |
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