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PDF STP400N4F6 Data sheet ( Hoja de datos )
| Número de pieza | STP400N4F6 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
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STI400N4F6, STP400N4F6
Features
N-channel 40 V, 120 A STripFET™ VI DeepGATE™
Power MOSFET in I²PAK and TO-220 packages
Datasheet − preliminary data
Order codes
STI400N4F6
STP400N4F6
VDSS
40 V
RDS(on) max
ID
< 1.7 mΩ 120 A(1)
1. Limited by package
■ Low gate charge
■ Very low on-resistance
■ High avalanche ruggedness
Applications
■ Switching applications
Description
These devices are N-channel Power MOSFETs
developed using the 6th generation of STripFET™
DeepGATE™ technology, with a new gate
structure. The resulting Power MOSFETs exhibits
the lowest RDS(on) in all packages.
TAB
TAB
123
I²PAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
$ 4!"
'
3
!-V
Table 1. Device summary
Order codes
STI400N4F6
STP400N4F6
Marking
400N4F6
Package
I²PAK
TO-220
Packaging
Tube
August 2012
Doc ID 023434 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/11
www.st.com
11
1 page  
STI400N4F6, STP400N4F6
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min.
ISD(1)
ISDM (1)
VSD (2)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
ISD = 120 A, VGS = 0
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 120 A, VDD = 32 V
di/dt = 100 A/µs,
Tj = 150 °C
1. Current limited by package
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
-
-
-
-
Typ.
TBD
Max
120
480
1.1
Unit
A
A
V
ns
nC
A
Doc ID 023434 Rev 1
5/11
5 Page 
STI400N4F6, STP400N4F6
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Doc ID 023434 Rev 1
11/11
11 Page | ||
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| PDF Descargar | [ Datasheet STP400N4F6.PDF ] | |
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