Datasheet.kr   

STP10LN80K5 데이터시트 PDF




STMicroelectronics에서 제조한 전자 부품 STP10LN80K5은 전자 산업 및 응용 분야에서
광범위하게 사용되는 반도체 소자입니다.


PDF 형식의 STP10LN80K5 자료 제공

부품번호 STP10LN80K5 기능
기능 N-channel Power MOSFET
제조업체 STMicroelectronics
로고 STMicroelectronics 로고


STP10LN80K5 데이터시트 를 다운로드하여 반도체의 전기적 특성과 매개변수에 대해 알아보세요.




전체 14 페이지수

미리보기를 사용할 수 없습니다

STP10LN80K5 데이터시트, 핀배열, 회로
STP10LN80K5
N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STP10LN80K5
VDS
800 V
RDS(on) max.
0.63 Ω
ID
8A
Industry’s lowest RDS(on) x area
Industry’s best figure of merit (FoM)
Ultra-low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
This very high voltage N-channel Power
MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STP10LN80K5
Table 1: Device summary
Marking
10LN80K5
Package
TO-220
Packing
Tube
December 2015
DocID027747 Rev 2
This is information on a product in full production.
1/14
www.st.com




STP10LN80K5 pdf, 반도체, 판매, 대치품
Electrical characteristics
STP10LN80K5
2 Electrical characteristics
TC = 25 °C unless otherwise specified
Table 5: On/off-state
Symbol
Parameter
Test conditions
V(BR)DSS Drain-source breakdown voltage
IDSS Zero gate voltage drain current
IGSS
VGS(th)
RDS(on)
Gate body leakage current
Gate threshold voltage
Static drain-source on-resistance
VGS = 0 V, ID = 1 mA
VGS = 0 V, VDS = 800 V
VGS = 0 V, VDS = 800 V
TC = 125 °C
VDS = 0 V, VGS = ±20 V
VDD = VGS, ID = 100 µA
VGS = 10 V, ID = 4 A
Min. Typ.
800
34
0.55
Max.
1
Unit
V
µA
50 µA
±10 µA
5V
0.63
Table 6: Dynamic
Symbol
Parameter
Test conditions
Ciss
Coss
Crss
Co(tr)(1)
Co(er)(2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Equivalent capacitance time
related
Equivalent capacitance energy
related
VDS = 100 V, f = 1 MHz,
VGS = 0 V
VDS = 0 to 640 V,
VGS = 0 V
Rg Intrinsic gate resistance
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
f = 1 MHz , ID= 0 A
VDD = 640 V, ID = 8 A
VGS= 10 V
See Figure 16: "Test
circuit for gate charge
behavior"
Min. Typ. Max. Unit
- 427 - pF
- 43 - pF
- 0.25 - pF
- 72 - pF
27 - pF
-7 -
- 15 - nC
- 4.2 - nC
- 9 - nC
Notes:
(1)Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
(2)Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when
VDS increases from 0 to 80% VDSS
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off delay time
tf Fall time
Table 7: Switching times
Test conditions
VDD= 400 V, ID = 4 A, RG = 4.7 Ω
VGS = 10 V
See Figure 15: "Test circuit for
resistive load switching times"
and Figure 20: "Switching time
waveform"
Min. Typ. Max. Unit
- 11.8 -
- 10 -
ns
ns
- 28 - ns
- 13 - ns
4/14 DocID027747 Rev 2

4페이지










STP10LN80K5 전자부품, 판매, 대치품
STP10LN80K5
Figure 8: Capacitance variations
Electrical characteristics
Figure 9: Normalized gate threshold voltage
vs temperature
Figure 10: Normalized on-resistance vs
temperature
Figure 11: Normalized V(BR)DSS vs temperature
Figure 12: Output capacitance stored energy
Figure 13: Source-drain diode forward
characteristics
DocID027747 Rev 2
7/14

7페이지


구       성 총 14 페이지수
다운로드[ STP10LN80K5.PDF 데이터시트 ]

당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는

포괄적인 데이터시트를 제공합니다.


구매 문의
일반 IC 문의 : 샘플 및 소량 구매
-----------------------------------------------------------------------

IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한
광범위한 전력 반도체를 판매합니다.

전력 반도체 전문업체

상호 : 아이지 인터내셔날

사이트 방문 :     [ 홈페이지 ]     [ 블로그 1 ]     [ 블로그 2 ]



관련 데이터시트

부품번호상세설명 및 기능제조사
STP10LN80K5

N-channel Power MOSFET

STMicroelectronics
STMicroelectronics

DataSheet.kr       |      2020   |     연락처      |     링크모음      |      검색     |      사이트맵