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PDF STP110N8F7 Data sheet ( Hoja de datos )
| Número de pieza | STP110N8F7 | |
| Descripción | N-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STP110N8F7
N-channel 80 V, 6.4 mΩ typ., 80 A, STripFET™ F7
Power MOSFET in a TO-220 package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
STP110N8F7
VDS
80 V
RDS(on)max
7.5 mΩ
ID
80 A
PTOT
170 W
Among the lowest RDS(on) on the market
Excellent figure of merit (FoM)
Low Crss/Ciss ratio for EMI immunity
High avalanche ruggedness
Applications
Switching applications
Description
This N-channel Power MOSFET utilizes
STripFET™ F7 technology with an enhanced
trench gate structure that results in very low on-
state resistance, while also reducing internal
capacitance and gate charge for faster and more
efficient switching.
Order code
STP110N8F7
Table 1: Device summary
Marking
Package
110N8F7
TO-220
Packaging
Tube
November 2015
DocID027154 Rev 2
This is information on a product in full production.
1/13
www.st.com
1 page  
STP110N8F7
Symbol
VSD(1)
trr
Qrr
IRRM
Parameter
Table 7: Source drain diode
Test conditions
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
VGS = 0, ISD = 80 A
ISD = 80 A, di/dt = 100 A/µs
VDD = 60 V (see Figure 15:
"Test circuit for inductive
load switching and diode
recovery times")
Electrical characteristics
Min.
-
-
-
Typ.
48.6
58.6
Max.
1.2
Unit
V
ns
nC
- 2.4
A
Notes:
(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
DocID027154 Rev 2
5/13
5 Page 
STP110N8F7
Dim.
A
b
b1
c
D
D1
E
e
e1
F
H1
J1
L
L1
L20
L30
øP
Q
Package mechanical data
Table 8: TO-220 type A mechanical data
mm
Min.
Typ.
Max.
4.40 4.60
0.61 0.88
1.14 1.70
0.48 0.70
15.25
15.75
1.27
10 10.40
2.40 2.70
4.95 5.15
1.23 1.32
6.20 6.60
2.40 2.72
13 14
3.50 3.93
16.40
28.90
3.75 3.85
2.65 2.95
DocID027154 Rev 2
11/13
11 Page | ||
| Páginas | Total 13 Páginas | |
| PDF Descargar | [ Datasheet STP110N8F7.PDF ] | |
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