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PDF STPSC12H065 Data sheet ( Hoja de datos )
| Número de pieza | STPSC12H065 | |
| Descripción | 650V power Schottky silicon carbide diode | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STPSC12H065
650 V power Schottky silicon carbide diode
$.
.
72$&
$
.
Features
• No or negligible reverse recovery
• Switching behavior independent of
temperature
• Dedicated to PFC applications
• High forward surge capability
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost the performance in hard
switching conditions. Its high forward surge
capability ensures a good robustness during
transient phases.
Table 1. Device summary
Symbol
Value
IF(AV)
VRRM
Tj (max)
12 A
650 V
175 °C
July 2015
This is information on a product in full production.
DocID024086 Rev 2
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www.st.com
1 page  
STPSC12H065
2 Package information
Package information
• Epoxy meets UL94, V0
• Recommended torque value: 0.55 N·m
• Maximum torque value: 0.7 N·m
• Cooling method: conduction (C)
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at:www.st.com.
ECOPACK® is an ST trademark.
2.1 TO-220AC package information
Figure 9. TO-220AC package outline
H2
ØI
L2
F1
F
L5
L6
L9
L4
G
A
C
L7
D
M
E
DocID024086 Rev 2
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STPSC12H065.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
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