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PDF STPSC16H065C Data sheet ( Hoja de datos )
| Número de pieza | STPSC16H065C | |
| Descripción | 650V power Schottky silicon carbide diode | |
| Fabricantes | STMicroelectronics | |
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STPSC16H065C
650 V power Schottky silicon carbide diode
$
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$
$
$ .
72$%
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
High forward surge capability
ECOPACK®2 compliant component
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band-gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimized
capacitive charge at turn-off behavior is
independent of temperature.
Especially suited for use in interleaved or bridge-
less topologies, this dual-diode rectifier will boost
the performance in hard switching conditions. Its
high forward surge capability ensures a good
robustness during transient phases.
Table 1. Device summary
Symbol
Value
IF(AV)
VRRM
Tj (max)
2x8A
650 V
175 °C
December 2015
This is information on a product in full production.
DocID024810 Rev 5
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www.st.com
1 page  
STPSC16H065C
2 Package information
Package information
Epoxy meets UL94, V0
Cooling method: conduction (C)
Recommended torque value: 0.4 to 0.6 N·m
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at:www.st.com.
ECOPACK® is an ST trademark.
2.1 TO-220AB package information
Figure 9. TO-220AB package outline
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5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet STPSC16H065C.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STPSC16H065C | 650V power Schottky silicon carbide diode | STMicroelectronics |
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