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PDF STPSC6H065 Data sheet ( Hoja de datos )
| Número de pieza | STPSC6H065 | |
| Descripción | 650V power Schottky silicon carbide diode | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STPSC6H065
650 V power Schottky silicon carbide diode
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Features
• No reverse recovery charge in application
current range
• Switching behavior independent of
temperature
• Dedicated to PFC applications
• High forward surge capability
• Insulated package TO-220AC Ins:
– Insulated voltage: 2500 V rms
– Typical package capacitance: 7 pF
Datasheet - production data
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost the performance in hard
switching conditions. Its high forward surge
capability ensures a good robustness during
transient phases.
Table 1. Device summary
Symbol
Value
IF(AV)
VRRM
Tj (max)
6A
650 V
175 °C
July 2015
This is information on a product in full production.
DocID023247 Rev 6
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www.st.com
1 page  
STPSC6H065
2 Package information
Package information
• Epoxy meets UL94, V0
• Recommended torque value: 0.55 N·m
• Maximum torque value: 0.7 N·m
• Cooling method: conduction (C)
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at:www.st.com.
ECOPACK® is an ST trademark.
2.1 TO-220AC package information
Figure 11. TO-220AC package outline
H2 A
ØI C
L5
L7
L6
L2
F1
F
L9
L4
G
D
M
E
DocID023247 Rev 6
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STPSC6H065
Package information
2.4 D²PAK package information
Figure 15. D2PAK package outline
E
L2
A
C2
L
L3
D
A1
B2
B
G
CR
A2
M*
V2
* FLAT ZONE NO LESS THAN 2mm
DocID023247 Rev 6
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11 Page | ||
| Páginas | Total 14 Páginas | |
| PDF Descargar | [ Datasheet STPSC6H065.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| STPSC6H065 | 650V power Schottky silicon carbide diode | STMicroelectronics |
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