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PDF STS9P2UH7 Data sheet ( Hoja de datos )
| Número de pieza | STS9P2UH7 | |
| Descripción | P-channel Power MOSFET | |
| Fabricantes | STMicroelectronics | |
| Logotipo |  |
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STS9P2UH7
P-channel 20 V, 0.0195 Ω typ., 9 A STripFET™ H7
Power MOSFET in a SO-8 package
Datasheet - production data
5
8
1
SO-8
4
Figure 1: Internal schematic diagram
Features
Order code
STS9P2UH7
VDS
20 V
RDS(on) max
0.0225 Ω @ 4.5 V
ID
9A
Very low on-resistance
Very low capacitance and gate charge
High avalanche ruggedness
Ultra logic level
Applications
Switching applications
Description
This device exhibits low on-state resistance and
capacitance for improved conduction and
switching performance.
Order code
STS9P2UH7
Table 1: Device summary
Marking
Package
9L2U
SO-8
Packaging
Tape and reel
For the P-channel Power MOSFET the actual polarity of the voltages and the current must be
reversed.
January 2015
DocID025143 Rev 3
This is information on a product in full production.
1/15
www.st.com
1 page  
STS9P2UH7
Symbol
VSD
(1)
Parameter
Forward on voltage
Table 7: Source drain diode
Test conditions
VGS= 0, ISD= 1 A
trr Reverse recovery time
Qrr
IRRM
Reverse recovery charge
Reverse recovery current
VDD= 16 V
di/dt = 100 A/µs, ISD= 1 A
Electrical characteristics
Min. Typ. Max. Unit
- 1V
- 15.8
- 5.9
- 0.7
ns
nC
A
Notes:
(1)Pulsed: pulse duration = 300 µs, duty cycle 1.5%
For the P-channel Power MOSFET the actual polarity of the voltages and the
current must be reversed.
DocID025143 Rev 3
5/15
5 Page 
STS9P2UH7
Package mechanical data
Figure 17: SO-8 recommended footprint
DocID025143 Rev 3
11/15
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet STS9P2UH7.PDF ] | |
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