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PDF 1SS400CST5 Data sheet ( Hoja de datos )
| Número de pieza | 1SS400CST5 | |
| Descripción | SWITCHING Diodes | |
| Fabricantes | WILLAS | |
| Logotipo |  |
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WILLAS
1SS400FCMS1T250-M+
THRU
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
FM1200-M+
SOD-123+ PACKAGE
LESHAN RADIPObCOFMrePeANPYr,oLdTuDc. t
SWITFCeaHtuINreGs Diodes
Package outlinSeOD-923
• Batch process design, excellent power dissipation offers
Switching diode• Applicbaetttieornresverse leakage current and thermal resistance.
•
Hig•hLosoppwteimepirdzoefsiblweoistacurhdrfiasnpcgeacmeo. unted application
Feat•uLroewspower loss, high efficiency.
in
order to
• Applications
High speed switching
1)
2)
E••xHHtriieggmhh sceuulyrrgresenmct aacpallapsbauibliritflyiat.yc,elomwofournwtainrdgvtoylptaeg.e
H•igGhuaSrpderinegd.for overvoltage protection.
d•rFoepa.tures
1) Extremely small
2) High Speed.
surface
mounting
type.
3) H•igUhltrraehliiagbhi-lsitpye. ed switching.
3) High reliability.
•
Con••sLStreiulaiccdot-inforeenepiptaaxritasl
planar chip, metal s
meet environmental
ilicon jun•cCtioonns.truction
standardsSiolicfon epitaxial
planar
SiliconMIeLp-SitaTxDi-a1l9p5l0a0na/2r28
Pb-•FRHreoaHeloSgpepanrcofrdkeuaecgtpferoordispuacact kfvoinargiplacaocbkdlienegsucfofidxe"Gsu"ffix
•
"H"
We declare that the material of product
compliance with RoHS requirements.
RoHMSepcrohdaucnt ifocrapladckaintgacode suffix "G" • Device Marking
SOD-123H
.030(0.75)
.033(0.85)
L1SS400GT1G
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.022(0.55)
.026(0.65)
1
.037(0.95)
.041(1.05)
0.071(1.8)
0.056(1.4)
2
SOD - 723
1
CATHODE
2
ANODE
Halo• gEepnoxfyre: eULp9r4o-dVu0crtaftoerd
packing code
flame retardant
suffix
"LH1"SS400GT1G=3
.012(0.30)
0.040(1.0)
0.024(0.6)
Moisture Sensitivity Level 1
• Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
0.031(0.8) Typ.
Mar•kTienrgmicnaolds e:MP:lea3ttheRodUdte2r0m2i6nals,
solderable
per
,
MILAB-SSOTLDUT-E75M0AXIMUM
Parameter
RATINGS (Ta =
Symbol
Dimensions
25°C)
Limits
in
inches and
Unit
(millimeters)
• Polarity : Indicated by cathode band
Peak reverse voltage
DC reverse voltage
VRM 90
V
VR Dime8n0sions in inchesVand (millimeters)
• Mounting Position : Any
Peak forward current
I FM
225
Maximu• mWeRigahtt i:nAgpspr
and Electrical
oximated 0.011 gr
CharacteristiMcesan,
am Surge
reSctiifnyingg lceurreDntiode
current (1s)
I
I@O TA=25
surge
100
500
mA
mA
mA
Parameter
MAXIMUM
RATINGS
AND
ELECTRIJSCutonrcAatigoLen tteeCmmpHpeerrAaattuuRrreeACTERTTsIjtgLSiTmICitSs –
125
55 ~ +125
°C
°C
Unit
PeRaaktingres vate2r5s℃e vamobltieangt etemperature unless otherVwiRsMe specified.
90
V
Single phase half wave, 60Hz, resistive of inductive load.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Min.
Typ. Max.
Unit
Conditions
DCForrecavpearcsitievevlooaldt,adgeerate current by 20%
VR
Forward voltage
VF80 –
V– 1.2 V I F=100mA
Reverse current
I R – – 0.1 µA VR=80V
PMeaarkkinfgoCrowdeard currReAnTItNGS
I 225 mASYMBOL FCMa1p2a0ci-tManHceFbMe1tw3e0e-nMtHermFMina1l4s0-MCHT FM150-M– H FM01.6702-MH 3F.0M180-MpFH FMV11R=000.-5MVH, f=F1MM1H1z50-MH FM1200-MH U
FM
Rev1e2rse recove1ry3time
14 trr 15 –
16–
4 18 ns
V1R0=6V , IF=10mA1,1R5L=100 Ω120
MMeaaxinmurmecRteicfuyrrienngt PceaukrRreevnetrse Voltage
Maximum RMS Voltage
IVRRM
VORMS
20
14
30
21
40 10500
28 35
60
42
80
56
100 mA 150
70 105
200 V
140 V
SMuarxgimeumcuDrCreBlnoctk(in1gsV)oltage
I 500suVrgDeC
ORDR2IN0G INFORM3A0TION 40
Device
Marking
50 60
Shipping
80 100 mA 150
Maximum Average Forward Rectified Current
IO
Junction temperature
Peak Forward Surge Current 8.3 ms single half sine-wave
T j
IFSM
L1SS400GT1G
3
1254000/Tape&Reel
1.0
30
Ospupeerriamtpionsegd/oSntroatread gloaed t(JeEmDEpCemreathtoudr) e
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Tstg
RΘJA
CJ
-55~+125
40
120
EleOcpetrraictinaglTRemapteinragtusre @RanTgAe=25
Storage TempePraaturraemRaentgeer
TJ
TSTG
Symbol
-55 to +125
Min. Typ. Max.
Unit
-55 to +150
- 65 to +175
Conditions
200
V
A
A
℃
P
CHARACTERISTICS
FMoarxwimaurmdFvorowaltrad gVoeltage at 1.0A DC
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM12010/-3MH U
VF VF
0.50 1.2
V 0.70
IF=01.8050mA
0.9
0.92 V
Maximum Average Reverse Current at
RReavteedrDsCeBclouckrirneg nVot ltage
@T A=25℃
@T A=125℃
IR IR
0.1 A
0.5
10 VR=80V
m
CNaOpTEaSc:itance between terminals
CT
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
3.0 pF
VR=0.5V,f=1MHZ
R2e- Tvheerrmsael RreesicstoanvceeFrryomtiJmunection to Ambient
trr
4 ns VR=6V,IF=10mA,RL=100
2013-12
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP.
1 page | ||
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