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PDF BD7602GUL Data sheet ( Hoja de datos )
| Número de pieza | BD7602GUL | |
| Descripción | Power Management IC | |
| Fabricantes | ROHM Semiconductor | |
| Logotipo |  |
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Datasheet
Power Management IC for Cell phone・Smart Phone
Power Management IC for Near Field
Communication LSI
BD7602GUL
Summary
BD7602GUL is a Power Management IC for mobile
device with NFC IC.
Each LDO output is controlled by 2 line serial interface
which supports I2C Bus protocol.
This helps to save space to integrate all PMIC for NFC
IC.
Features
Low current consumption 10µA (Typ)
2 Channel LDO
2.7V UVLO detection
1 Channel GPO
Thermal Shut Down function
2 line serial interface which supports I2C bus
protocol.
Key Parameters
Input voltage range ：
Output voltage(LDO1)：
Output voltage range(LDO2)：
Output current(LDO1)：
Output current(LDO2)：
VBAT operating current：
Operating temperature range：
2.7V ～ 5.5V
3.0V(Typ)
2.8V ～ 3.3V
100mA(Max)
150mA(Max)
10μA (Typ)
-35°C ～ +85°C
PACKAGE
VCSP50L1C
W (Typ) x D (Typ) x H (Max)
1.60mm x 1.60mm x 0.57mm
USE
Smart Phones
Cell Phones
Mobile device which has NFC IC
Application Schematic
1μF
VBAT
VCSP50L1C
Voltage
Detect
(2.7V)
TSD
DVDD
DVDD
2.2KΩ
2.2KΩ
SCL
SDA
I2C
SLAVE
REGISTER
DPREF
LDO1
3.0V
100mA
LDO2
2.8V～3.3V
150mA
VREF
(IC Internal
Power）
VOUT1
4.7uF
VOUT2
4.7uF
REFC
0.1μF
GPO
GPO
GND
Figure 1. Application schematic.
○Product structure : Silicon monolithic integrated circuit. ○This product has no designed protection against radioactive rays.
www.rohm.co.jp
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・14・001
1/22
TSZ02201-0Q4Q0AB00010-1-2
25.Feb.2014 Rev.001
1 page  
BD7602GUL
Electrical Characteristic (Unless otherwise specified, VBAT=3.6V, VDVDD=1.8V, Ta=25°C)
Parameter
Symbol MIN TYP MAX UNIT
Condition
Circuit Current
VBAT Circuit Current(VBAT=3.6V)
VBAT Circuit Current(VBAT=3.1V)
DVDD Circuit Current
Voltage Detector
Detect Voltage
Detect Voltage Hysteresis
VREF Output Voltage
LDO1
Output Voltage
Output Max Current
Line Regulation
Load Regulation
ICCBAT
ICCBAT
ICCDVDD
-
-
VUVLO
VUVLOHYS
VOREF
2.64
50
2.45
VOUT1
IOUT1MAX
ΔVIS1
ΔVLS1
2.94
100
-
-
PSRR
PSRR1
-
Discharge Resistance
LDO2
Output Voltage
Variable Output Voltage
Output Max Current
Line Regulation
Load Regulation
RDIS1
-
VOUT2
VO2RNG
IOUT2MAX
ΔVIS2
ΔVLS2
2.94
2.80
150
-
-
PSRR
PSRR2
-
Discharge resistance
GPO
Output H Level
Output L Level
NMOS output pulled up max voltage
NMOS output L level
NMOS output leak current
I2Cserial interface
Input H Level (SCL, SDA)
Input L Level (SCL, SDA)
Input Leak Current (SCL, SDA)
Output L Level (SDA)
RDIS2
-
VOHGPO
VOLGPO
VMXGPON
VOLGPON
ILKGPON
0.8×
VOUT1
-0.3
-
-0.3
-1
VIH
0.75×
VDVDD
VIL -0.3
ILK -1
VOL -0.3
10
9.5
0
2.70
100
2.50
3.00
-
2
20
45
100
3.00
-
-
2
20
45
100
-
-
-
-
0
-
-
0
-
18
15
1
2.76
150
2.55
3.06
-
-
-
-
-
3.06
3.30
-
-
-
-
-
0.3+
VOUT1
0.4
VBAT
0.4
1
0.3+
VDVDD
0.25×
VDVDD
1
0.4
µA LDO1,2: No Load
µA LDO1,2: No Load
µA
V Down Sweep
mV
V
V IOUT1= 50mA
mA
mV VBAT=3.3～4.5V, IOUT1= 50mA
mV IOUT1= 1～100mA
VBAT=4.2V+0.2Vpp,
dB IOUT1= 50mA
fr=120Hz,BW=20～20kHz
Ω VBAT=2.5V
V IOUT1= 50mA
V
mA
mV
VBAT=VOUT2+0.3V～4.5V,
IOUT2= 50mA
mV IOUT2= 1～150mA
VBAT=4.2V+0.2Vpp,
dB IOUT2= 50mA
fr=120Hz,BW=20～20kHz
Ω VBAT=2.5V
V ISINKGPO= 3mA
V ISOURCEGPO= 3mA
V
V ISOURCEGPO= 3mA
µA Terminal voltage=VOUT1, 0V
V
V
µA Terminal voltage=VDVDD, 0V
V ISOURCE= 6mA
www.rohm.co.jp
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
5/22
TSZ02011-0Q4Q0AB00010-1-2
25.Feb.2014 Rev.001
5 Page 
BD7602GUL
Characteristic Data(Reference Data) -continuance
60
40
20
0
10
Io=1mA
Io=50mA
Io=100mA
100
1000
10000
Frequency : fR[Hz]
100000
Figure 19. Ripple Rejection VS Frequency
(VBAT=4.2V+0.2Vpp,Cout=4.7μF,fR=120Hz,Ta=25℃)
60
40
20
0
10
Io=1mA
Io=50mA
Io=100mA
100
1000
10000
Frequency : fR[Hz]
100000
Figure 20. Ripple Rejection VS Frequency
(VBAT=4.2V+0.2Vpp,Cout=4.7μF,fR=120Hz,Ta=25℃)
www.rohm.co.jp
© 2014 ROHM Co., Ltd. All rights reserved.
TSZ22111・15・001
11/22
TSZ02011-0Q4Q0AB00010-1-2
25.Feb.2014 Rev.001
11 Page | ||
| Páginas | Total 25 Páginas | |
| PDF Descargar | [ Datasheet BD7602GUL.PDF ] | |
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