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PDF KTD1414 Data sheet ( Hoja de datos )
| Número de pieza | KTD1414 | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
KTD1414
EPITAXIAL PLANAR NPN TRANSISTOR
SWITCHING APPLICATIONS.
HAMMER DRIVER, PULSE MOTOR DRIVER
APPLICATIONS.
FEATURES
High DC Current Gain : hFE=2000(Min.) at VCE=2V, IC=1A.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation (Tc=25 )
Junction Temperature
Storage Temperature Range
SYMBOL
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
RATING
100
80
5
4
0.5
25
150
-55 150
UNIT
V
V
V
A
A
W
A
S
E
LL
M
DD
NN
C
DIM MILLIMETERS
A 10.0+_ 0.3
B 15.0+_ 0.3
C 2.70 +_ 0.3
D 0.76+0.09/-0.05
E Φ3.2 +_ 0.2
F 3.0+_ 0.3
G 12.0+_ 0.3
H 0.5+0.1/-0.05
J 13.6 +_ 0.5
R K 3.7+_ 0.2
L 1.2+0.25/-0.1
M 1.5+0.25/-0.1
N 2.54 +_ 0.1
P 6.8+_ 0.1
Q 4.5 +_ 0.2
R 2.6 +_0.2
HS
0.5 Typ
123
1. BASE
2. COLLECTOR
3. EMITTER
TO-220IS
EQUIVALENT CIRCUIT
BASE
~_ 4.5KΩ
COLLECTOR
~_ 300Ω
EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Breakdown Voltage
DC Current Gain
Saturation Voltage
Collector-Emitter
Base-Emitter
ICBO
IEBO
V(BR)CEO
hFE(1)
hFE(2)
VCE(sat)
VBE(sat)
TEST CONDITION
VCB=100V, IE=0
VEB=5V, IC=0
IC=10mA, IB=0
VCE=2V, IC=1A
VCE=2V, IC=3A
IC=3A, IB=6mA
IC=3A, IB=6mA
Switching Time
Turn-on Time
Storage Time
Fall Time
ton 20µsec INPUT I B1
IB1
tstg 0
I B2
IB2
I B1 =-I B2 =6mA
tf DUTY CYCLE 1%
OUTPUT
10Ω
VCC =30V
MIN.
-
-
80
2000
1000
-
-
TYP.
-
-
-
-
-
-
-
MAX.
20
2.5
-
-
-
1.5
2.0
UNIT
A
mA
V
V
- 0.2 -
- 1.5 -
S
- 0.6 -
2007. 5. 22
Revision No : 2
1/2
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet KTD1414.PDF ] | |
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