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UPA1855 PDF 데이터시트 : 부품 기능 및 핀배열

부품번호 UPA1855
기능 N-CHANNEL MOS FIELD EFFECT TRANSISTOR
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UPA1855 데이터시트, 핀배열, 회로
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1855
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR SWITCHING
DESCRIPTION
The µPA1855 is a switching device which can be
driven directly by a 2.5 V power source.
The µPA1855 features a low on-state resistance and
excellent switching characteristics, and is suitable for
applications such as power switch of portable machine
and so on.
FEATURES
Can be driven by a 2.5 V power source
Low on-state resistance
RDS(on)1 = 23 mMAX. (VGS = 4.5 V, ID = 3.0 A)
RDS(on)2 = 24 mMAX. (VGS = 4.0 V, ID = 3.0 A)
RDS(on)3 = 29 mMAX. (VGS = 2.5 V, ID = 3.0 A)
Built-in G-S protection diode against ESD
ORDERING INFORMATION
PART NUMBER
PACKAGE
PACKAGE DRAWING (Unit : mm)
85
1 :Drain1
2, 3 :Source1
4 :Gate1
5 :Gate2
6, 7 :Source2
8 :Drain2
1.2 MAX.
1.0±0.05
0.25
14
3°
+5°
3°
0.1±0.05
0.5
0.6
+0.15
0.1
3.15 ±0.15
3.0 ±0.1
6.4 ±0.2
4.4 ±0.1
1.0 ±0.2
µPA1855GR-9JG
Power TSSOP8
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
0.65 0.8 MAX.
0.27
+0.03
0.08
0.10 M
0.1
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
Channel Temperature
Storage Temperature
VDSS
VGSS
ID(DC)
ID(pulse)
PT
Tch
Tstg
20
±12
±6.0
±24
2.0
150
–55 to +150
V
V
A
A
W
°C
°C
Notes 1. PW 10 µs, Duty Cycle 1 %
2. Mounted on ceramic substrate of 5000 mm2 x 1.1 mm
EQUIVALENT CIRCUIT
Drain1
Drain2
Gate1
Body
Diode Gate2
Body
Diode
Gate
Protection Source1
Diode
Gate
Protection
Diode
Source2
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D13454EJ2V0DS00 (2nd edition)
Date Published May 2001 NS CP(K)
Printed in Japan
The mark 5 shows major revised points.
©
1998, 1999




UPA1855 pdf, 반도체, 판매, 대치품
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
VGS = 2.5 V
30 TA = 125˚C
TA = 75˚C
TA = 25˚C
20
TA = -25˚C
10
0.01
0.1 1
10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
VGS = 4.5 V
30
20
10
0.01
TA = 125˚C
TA = 75˚C
TA = 25˚C
TA = -25˚C
0.1 1
10
ID - Drain Current - A
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
50
ID = 3.0 A
40
30
20
10
0
0 2 4 6 8 10 12
VGS - Gate to Source Voltage - V
µ PA1855
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
40
VGS = 4.0 V
30
20
10
0.01
TA = 125˚C
TA = 75˚C
TA = 25˚C
TA = -25˚C
0.1 1
10
ID - Drain Current - A
100
DRAIN TO SOURCE ON STATE RESISTANCE vs.
CHANNEL TEMPERATURE
30
ID = 3.0 A
VGS = 2.5 V
VGS = 4.0 V
20
VGS = 4.5 V
10
- 50
0 50 100
Tch - Channel Temperature -˚C
150
10000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
f = 1 MHz
1000
100
Ciss
Coss
Crss
10
0.1
1 10
VDS - Drain to Source Voltage - V
100
4 Data Sheet D13454EJ2V0DS

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UPA1855 전자부품, 판매, 대치품
[MEMO]
µ PA1855
Data Sheet D13454EJ2V0DS
7

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