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부품번호 | PDTD143XU 기능 |
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기능 | NPN resistor-equipped transistors | ||
제조업체 | NXP Semiconductors | ||
로고 | |||
전체 27 페이지수
PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
Rev. 1 — 13 May 2014
Product data sheet
1. Product profile
1.1 General description
NPN Resistor-Equipped Transistor (RET) family in a very small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview
Type number
Package
NXP
PDTD113EU
SOT323
PDTD113ZU
PDTD123EU
PDTD123YU
PDTD143EU
PDTD143XU
PDTD114EU
JEITA
SC-70
JEDEC
-
PNP
complement
PDTB113EU
PDTB113ZU
PDTB123EU
PDTB123YU
PDTB143EU
PDTB143XU
PDTB114EU
Package
configuration
very small
1.2 Features
500 mA output current capability
Built-in bias resistors
Simplifies circuit design
Reduces component count
10 % resistor ratio tolerance
AEC-Q101 qualified
High temperature applications
up to 175 °C
1.3 Applications
IC inputs control
Cost-saving alternative to BC807 or
BC817 series transistors in digital
applications
Switching loads
NXP Semiconductors
PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
Table 6. Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Ptot total power dissipation
Tamb 25 C
[1] -
[2] -
Tj
Tamb
junction temperature
ambient temperature
-
55
Tstg storage temperature
55
Max
300
425
175
+175
+175
Unit
mW
mW
C
C
C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
500
Ptot
(mW)
400
300
(1)
(2)
aaa-012426
200
100
0
-75 25 125 225
Tamb (°C)
(1) FR4 PCB, 4-layer copper, standard footprint
(2) FR4 PCB, single-sided copper, standard footprint.
Fig 1. Power derating curves
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from junction
to ambient
Conditions
in free air
Min Typ Max Unit
[1] - - 500 K/W
[2] - - 353 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, 4-layer copper, tin-plated and standard footprint.
PDTD1XXXU_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
4 of 27
4페이지 NXP Semiconductors
PDTD1xxxU series
500 mA, 50 V NPN resistor-equipped transistors
Table 8. Characteristics …continued
Tamb = 25 C unless otherwise specified.
Symbol Parameter
Conditions
R1 bias resistor 1 (input)
PDTD113EU
PDTD113ZU
PDTD123EU
PDTD123YU
PDTD143EU
PDTD143XU
PDTD114EU
R2/R1 bias resistor ratio
PDTD113EU
PDTD113ZU
PDTD123EU
PDTD123YU
PDTD143EU
PDTD143XU
PDTD114EU
Cc collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
fT transition frequency VCE = 5 V; IC = 50 mA;
f = 100 MHz
Min
0.7
0.7
1.54
1.54
3.3
3.3
7.0
0.9
9.0
0.9
4.1
0.9
1.91
0.9
-
[1] -
[1] Characteristics of built-in transistor.
Typ
1.0
1.0
2.2
2.2
4.7
4.7
10
1.0
10
1.0
4.55
1
2.13
1.0
7
225
Max
1.3
1.3
2.86
2.86
6.1
6.1
13
1.1
11
1.1
5.0
1.1
2.34
1.1
-
-
Unit
k
k
k
k
k
k
k
pF
MHz
PDTD1XXXU_SER
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 1 — 13 May 2014
© NXP Semiconductors N.V. 2014. All rights reserved.
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DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |