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부품번호 | VS-113MT140KPBF 기능 |
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기능 | Three Phase Controlled Bridge | ||
제조업체 | Vishay | ||
로고 | |||
전체 10 페이지수
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
Three Phase Controlled Bridge (Power Modules),
55 A to 110 A
MT-K
PRODUCT SUMMARY
IO
VRRM
Package
Circuit
55 A to 110 A
800 V to 1600 V
MT-K
Three phase bridge
FEATURES
• Package fully compatible with the industry
standard INT-A-PAK power modules series
• High thermal conductivity package, electrically
insulated case
• Excellent power volume ratio
• 4000 VRMS isolating voltage
• UL E78996 approved
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
A range of extremely compact, encapsulated three phase
controlled bridge rectifiers offering efficient and reliable
operation. They are intended for use in general purpose and
heavy duty applications.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
VALUES
5.MT...K
IO
IFSM
TC
50 Hz
60 Hz
55
85
390
410
50 Hz
I2t
60 Hz
I2t
770
700
7700
VRRM
TStg
TJ
Range
Range
Range
VALUES
9.MT...K
90
85
950
1000
4525
4130
45 250
800 to 1600
-40 to 125
-40 to 125
VALUES
11.MT...K
110
85
1130
1180
6380
5830
63 800
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE
NUMBER
VOLTAGE
CODE
VS-5.MT...K
VS-9.MT...K
VS-11.MT...K
80
100
120
140
160
80
100
120
140
160
VRRM, MAXIMUM
REPETITIVE PEAK
REVERSE VOLTAGE
V
800
1000
1200
1400
1600
800
1000
1200
1400
1600
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
900
1100
1300
1500
1700
900
1100
1300
1500
1700
VDRM, MAXIMUM
REPETITIVE PEAK
OFF-STATE VOLTAGE,
GATE OPEN CIRCUIT
V
800
1000
1200
1400
1600
800
1000
1200
1400
1600
UNITS
A
°C
A
A2s
A2s
V
°C
°C
IRRM/IDRM,
MAXIMUM
AT TJ = 125 °C
mA
10
20
Revision: 27-Feb-14
1 Document Number: 94353
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
220
200
5.MT..K Series
TJ = 125 °C
180
160
140
120°
120 (Rect.)
100
80
60
40
20
0
0 5 10 15 20 25 30 35 40 45 50 55
220
200
180
160
140
120
100
80
60
40
20
0
0
0.5
0.4
K/W
0.3 K/W
K/W
0.7 K/W
1.0 K/W
1.5 K/W
25 50
75 100
94353_03a
Total Output Current (A)
94353_03b
Maximum Allowable Ambient
Temperature (°C)
Fig. 3 - Total Power Loss Characteristics
125
350
At any rated load condition and with
rated VRRM applied following surge.
Initial TJ = 125 °C
300 at 60 Hz 0.0083 s
at 50 Hz 0.0100 s
250
200
5.MT..K Series
Per junction
150
1
10
100
94353_04
Number of Equal Amplitude Half
Cycle Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
130
9.MT..K Series
120
120°
110 (Rect.)
100
90 ~
80
0
94353_06
+
-
20 40 60 80
Total Output Current (A)
100
Fig. 6 - Current Ratings Characteristic
400 Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.
350 Initial TJ = 125 °C
No voltage reapplied
300 Rated VRRM reapplied
250
200
5.MT..K Series
Per junction
150
0.01
0.1
1
94353_05
Pulse Train Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
1000
100
TJ = 25 °C
10 TJ = 125 °C
9.MT..K Series
Per junction
1
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
94353_07
Total Output Current
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 27-Feb-14
4 Document Number: 94353
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
4페이지 VS-5.MT...KPbF, VS-9.MT...KPbF, VS-11.MT...KPbF Series
www.vishay.com
Vishay Semiconductors
10
Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 30 Ω;
tr = 0.5 μs, tp ≥ 6 μs
1
b) Recommended load line for
≤ 30 % rated dI/dt: 20 V, 65 Ω
tr = 1 μs, tp ≥ 6 μs
(a)
(b)
(1) PGM = 100 W, tp = 500 μs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
0.1
VGD
(4) (3) (2) (1)
0.01
0.001
IGD
0.01
5.MT...K, 9.MT...K, 11.MT...K Series
0.1 1
Frequency Limited by PG(AV)
10 100
94353_17
Instantaneous Gate Current (A)
Fig. 17 - Gate Characteristics
ORDERING INFORMATION TABLE
Device code
VS- 11 3 MT 160 K S90 PbF
1000
1 2 3 45
67
1 - Vishay Semiconductors product
2 - Current rating code:
5 = 55 A (average)
9 = 90 A (average)
11 = 110 A (average)
3 - Circuit configuration code:
1 = Negative half-controlled bridge
2 = Positive half-controlled bridge
3 = Full-controlled bridge
4 - Essential part number
5 - Voltage code x 10 = VRRM (see Voltage Ratings table)
6 - Critical dV/dt:
None = 500 V/µs (standard value)
S90 = 1000 V/µs (special selection)
7 - PbF = Lead (Pb)-free
Note
• To order the optional hardware go to www.vishay.com/doc?95172
CIRCUIT CONFIGURATION
A
1
D
BC
64 3
25
E
F
Full-controlled bridge
(5.MT...K, 9.MT...K, 11.MT..K)
AB
C
1
D
25
E
Positive half-controlled bridge
(5.MT...K, 9.MT...K, 11.MT..K)
F
A
D
BC
64
3
E
Negative half-controlled bridge
(5.MT...K, 9.MT...K, 11.MT..K)
F
Dimensions
LINKS TO RELATED DOCUMENTS
www.vishay.com/doc?95004
Revision: 27-Feb-14
7 Document Number: 94353
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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부품번호 | 상세설명 및 기능 | 제조사 |
VS-113MT140KPBF | Three Phase Controlled Bridge | Vishay |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |