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Número de pieza | 1SS355 | |
Descripción | 200mW High Speed SMD Switching Diode | |
Fabricantes | Taiwan Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de 1SS355 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
No Preview Available ! Small Signal Product
1SS355
Taiwan Semiconductor
200mW High Speed SMD Switching Diode
FEATURES
- Fast switching device (trr<4.0ns)
- Surface Mount Device Type
- Moisture sensitivity level 1
- Matte Tin (Sn) lead finish with Nickel (Ni) underplate
- Pb free version and RoHS compliant
- Packing code with suffix "G" means
green compound (halogen-free)
SOD-323F
MECHANICAL DATA
- Case: Flat lead SOD-323F small outline plastic package
- Terminal: Matte tin plated, lead free,
solderable per MIL-STD-202, Method 208 guaranteed
- High temperature soldering guaranteed: 260°C/10s
- Polarity: Indicated by cathode band
- Weight: 6 ± 0.5mg
- Marking code: S4
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise noted)
PARAMETER
SYMBOL
VALUE
Power Dissipation
PD 200
Repetitive Peak Reverse Voltage
VRRM
90
Reverse Voltage
VR 80
Minimum Breakdown Voltage at IR = 100μA
VBR
80
Forward Current
IF 250
Continue Forward Current
IO 150
Repetitive Peak Forward Voltage
IFSM
500
Maximum Reverse Leakage Current at VR = 80V
IR
100
Maximum Forward Voltage at IF = 100mA
VF
1.2
Maximum Reverse Recovery Time
at IF = 10mA, VR = 6V, RL = 100 Ohms
trr 4
Maximum Junction Capacitance at VR = 0.5V, f = 1MHz
Cj
4
OperatingTemperature Range
TOPR
- 65 to +150
Storage Temperature Range
TSTG
- 65 to +150
Note : These ratings are limiting values above which the serviceability of the diode may be impaired
UNIT
mW
V
V
V
mA
mA
mA
nA
V
ns
pF
oC
oC
Document Number: DS_S1412036
Version: B14
1 page |
Páginas | Total 3 Páginas | |
PDF Descargar | [ Datasheet 1SS355.PDF ] |
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