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부품번호 | CGHV40030 기능 |
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기능 | GaN HEMT | ||
제조업체 | Cree | ||
로고 | |||
전체 11 페이지수
CGHV40030
30 W, DC - 6 GHz, 50V, GaN HEMT
Cree’s CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor
(HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities.
The device can be deployed for L, S and C-Band amplifier applications. The datasheet
specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50
volt rail circuit while housed in a 2-lead flange or pill package.
Package Type: 440P1N66: CaGnHdV44400013906
Typical Performance 0.96 - 1.4 GHz (TC = 25˚C) , 50 V
Parameter
0.96 GHz
1.1 GHz
Gain @ PSAT
15.6
15.8
Saturated Output Power
29 30
Drain Efficiency @ PSAT
62
Note:
Measured CW in the CGHV40030-AMP application circuit.
74
1.25 GHz
16.6
36
64
1.4 GHz
15.8
31
67
Units
dB
W
%
Features
• Up to 6 GHz Operation
• 30 W Typical Output Power
• 16 dB Gain at 1.2 GHz
• Application circuit for 0.96 - 1.4 GHz
• 70% Efficiency at PSAT
• 50 V Operation
Subject to change without notice.
www.cree.com/rf
1
CGHV40030-AMP Application Circuit
Bill of Materials
Designator
R1
R2
R3
L1
C3, C4
C5, C6, C11, C12
C2, C7, C8
C9, C10
C1, C13
C14
C15, C20
C16,C21
C17
C22
C18
C19
J1,J2
J3
Description
RES,1/16W,0603,1%,187 OHMS
RES, 2.2 OHMS, +/- 1%, 1/16W,0603
RES,1/16W,0603,1%,15.4 OHMS
IND, 5.6nH, 0603
CAP, 2.7,+/-0.1pF, 0603, ATC
CAP, 1.2pF,+/-0.1pF, 0603, ATC
CAP 1.8pF,+/-0.1pF 0603, ATC
CAP, 3.9pF,+/-0.1pF 0603, ATC
CAP, 24pF,+/-5% 0603, ATC
CAP 10UF 16V TANTALUM
CAP, 33000pF, 0805, ATC
CAP, 470PF, 5%, 100V, 0603,
CAP, 68pF,+/-0.1pF 0603, ATC
CAP, 56PF +/- 5%, 0603 , ATC600S
CAP, 33UF, 20%, G CASE
CAP, 1.0UF, 100V, 10%, X7R, 1210
CONN, SMA, PANEL MOUNT JACK, FLANGE,
4-HOLE, BLUNT POST
HEADER RT>PLZ .1CEN LK 5POS
BASEPLATE, CGH35015, 2.60 X 1.7
CGHV40030F/P PCB, RO4350, 0.020” THK
Qty
1
1
1
1
2
4
2
2
2
1
2
2
1
1
1
1
2
1
1
1
CGHV40030-AMP Application Circuit
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
4 CGHV40030 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
4페이지 CGHV40030-AMP Application Circuit Schematic
CGHV40030-AMP Application Circuit Outline
Copyright © 2014-2015 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are
registered trademarks of Cree, Inc.
7 CGHV40030 Rev 1.0
Cree, Inc.
4600 Silicon Drive
Durham, North Carolina, USA 27703
USA Tel: +1.919.313.5300
Fax: +1.919.869.2733
www.cree.com/rf
7페이지 | |||
구 성 | 총 11 페이지수 | ||
다운로드 | [ CGHV40030.PDF 데이터시트 ] |
당사 플랫폼은 키워드, 제품 이름 또는 부품 번호를 사용하여 검색할 수 있는 |
구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
CGHV40030 | GaN HEMT | Cree |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |