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DMC1017UPD 데이터시트 PDF




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부품번호 DMC1017UPD 기능
기능 COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
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DMC1017UPD 데이터시트, 핀배열, 회로
DMC1017UPD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
POWERDI®5060-8
Product Summary
Device V(BR)DSS
Q1 12V
Q2 -12V
RDS(ON)
17mΩ @ VGS = 4.5V
25mΩ @ VGS = 2.5V
32mΩ @ VGS = -4.5V
53mΩ @ VGS = -2.5V
ID
TA = +25°C
9.5A
7.8A
-6.9A
-5.4A
Description and Applications
This new generation Complementary Pair Enhancement Mode
MOSFET has been designed to minimize RDS(on) and yet maintain
superior switching performance. This device is ideal for use in
Notebook battery power management and Loadswitch.
Notebook Battery Power Management
DC-DC Converters
Loadswitch
Features and Benefits
Thermally Efficient Package-Cooler Running Applications
High Conversion Efficiency
Low RDS(ON) Minimizes On State Losses
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: POWERDI5060-8
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.097 grams (approximate)
D1 D2
S1
G1 G2
G1
S2
G2
S1 S2
Top View
Pin1
Bottom View
Q1 N-Channel MOSFET Q2 P-Channel MOSFET
Top View
Pin Configuration
D1
D1
D2
D2
Ordering Information (Note 4)
Notes:
Part Number
DMC1017UPD-13
Case
POWERDI5060-8
Packaging
2500 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
D1 D1 D2 D2
C1017UD
YY WW
= Manufacturer’s Marking
C1017UD = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 13 = 2013)
WW = Week (01 - 53)
S1 G1 S2 G2
POWERDI is a registered trademark of Diodes Incorporated.
DMC1017UPD
Document number: DS36903 Rev. 1 - 2
1 of 9
www.diodes.com
September 2015
© Diodes Incorporated




DMC1017UPD pdf, 반도체, 판매, 대치품
1.5
1
ID = 250µA
ID = 1mA
0.5
0
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
10000
f = 1MHz
1000
Ciss
100
Crss
Coss
10
0 2 4 6 8 10 12
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Junction Capacitance
DMC1017UPD
20
18
16
14
12
10
8
6 TA = 150°C
TA = 85°C
4 TA = 125°C
TA = 25°C
2 TA = -55°C
0 0 0.3 0.6 0.9 1.2 1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
8
6
4
VDS = 6V
ID = 11.8A
2
0
0 5 10 15 20 25 30 35 40
Qg, TOTAL GATE CHARGE (nC)
Figure 10 Gate Charge
POWERDI is a registered trademark of Diodes Incorporated.
DMC1017UPD
Document number: DS36903 Rev. 1 - 2
4 of 9
www.diodes.com
September 2015
© Diodes Incorporated

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DMC1017UPD 전자부품, 판매, 대치품
10000
1000
f = 1MHz
Ciss
Coss
Crss
8
6
4
2
DMC1017UPD
VDS = -6V
ID = -8.9A
100
0
2 4 6 8 10
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 19 Typical Junction Capacitance
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
12
0
0 5 10 15 20 25 30 35 40
Qg, TOTAL GATE CHARGE (nC)
Figure 20 Gate-Charge Characteristics
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Single Pulse
0.001
0.00001
0.0001
RJA(t) = r(t) * RJA
RJA = 104°C/W
Duty Cycle, D = t1/ t2
0.001
0.01
0.1
1
t1, PULSE DURATION TIMES (sec)
Figure 21 Transient Thermal Resistance
10
100 1000
POWERDI is a registered trademark of Diodes Incorporated.
DMC1017UPD
Document number: DS36903 Rev. 1 - 2
7 of 9
www.diodes.com
September 2015
© Diodes Incorporated

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DMC1017UPD

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

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