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부품번호 | DMC25D0UVT 기능 |
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기능 | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | ||
제조업체 | Diodes | ||
로고 | |||
전체 11 페이지수
DMC25D0UVT
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
Q1
Q2
V(BR)DSS
25V
-30V
RDS(ON)
4Ω @ VGS = 4.5V
80mΩ @ VGS= -12V
125mΩ @ VGS= -4.5V
ID
TA = +25°C
0.4 A
-3.2 A
-2.6 A
Description
This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
Applications
DC-DC Converters
Power Management Functions
Load Switch
Features and Benefits
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
ESD Protected Gate on N-Channel (>6kV Human Body Model)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TSOT26
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals Connections: See Diagram
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.013 grams (Approximate)
D1 D2
TSOT26
G1 G2
Top View
Top View
Internal Circuit
Gate Protection
Diode
S1
Q1 N-Channel MOSFET
S2
Q2 P-Channel MOSFET
Ordering Information (Note 4)
Notes:
Part Number
DMC25D0UVT-7
DMC25D0UVT-13
Case
TSOT26
TSOT26
Packaging
3000 / Tape & Reel
10000 / Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
Code
2015
C
Month
Code
Jan Feb
12
DMC25D0UVT
Document number: DS37508 Rev. 3 - 2
C5D
C5D = Product Type Marking Code
YM or YM = Date Code Marking
Y or Y= Year (ex: C = 2015)
M = Month (ex: 9 = September)
2016
D
Mar
3
2017
E
2018
F
Apr May Jun
456
Jul
7
1 of 11
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2019
G
Aug
8
Sep
9
2020
H
Oct
O
2021
I
Nov Dec
ND
April 2015
© Diodes Incorporated
Typical Characteristics - N-CHANNEL
1.5
VGS=3.5V
VGS=4.0V
1.2 VGS=4.5V
VGS=2.5V
0.9 VGS=3.0V
VGS=2.0V
0.6
0.3
0.0
0
1.5
VGS=1.5V
VGS=1.2V
0.5 1 1.5 2 2.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
3
1.2
DMC25D0UVT
1
VDS=5V
0.8
0.6
0.4
85℃
25℃
-55℃
125℃
150℃
0.2
0
0
5
0.5 1 1.5 2 2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
3
4
0.9
0.6 VGS=4.5V
0.3
3
2
1 ID=400mA
0
0 0.3 0.6 0.9 1.2 1.5
ID, DRAIN-SOURCE CURRENT (A)
Figure 3. Typical On-Resistance vs Drain Current
and Gate Voltage
2
VGS=4.5V
1.5
125℃
150℃
1
85℃
25℃
0.5
-55℃
0
1
1.8
1.6
234567
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
VGS=4.5V,
ID=500mA
8
1.4
1.2 VGS=2.5V,
ID=100mA
1
0.8
0 0.6
0 0.2 0.4 0.6 0.8 1
ID, DRAIN CURRENT (A)
Figure 5. Typical On-Resistance vs Drain Current and
Temperature
DMC25D0UVT
Document number: DS37508 Rev. 3 - 2
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
4 of 11
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April 2015
© Diodes Incorporated
4페이지 Typical Characteristics - P-CHANNEL
15.0
12.0
VGS=-10V
9.0
6.0
VGS=-2.5V
VGS=-3.0V
VGS=-4.0V
VGS=-4.5V
VGS=-2.0V
DMC25D0UVT
10
VDS=-5V
8
6
4
85℃
25℃
-55℃
125℃
150℃
3.0
VGS=-1.5V VGS=-1.3V
2
0.0
0
0.15
12
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 14. Typical Output Characteristic
3
0.12
0.09
0.06
0.03
VGS=-2.5V
VGS=-4.5V
VGS=-10V
0
0
0.3
0.25
0.5 1 1.5 2 2.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 15. Typical Transfer Characteristic
ID=-2.3A
ID=-1.9A
3
0.2
0.15
0.1
0.05
ID=-1.0A
0
0.12
1 2 3 4 5 6 7 8 9 10
ID, DRAIN-SOURCE CURRENT (A)
Figure 16. Typical On-Resistance vs Drain Current
and Gate Voltage
VGS=-4.5V
0.1
150℃
0.08
125℃
85℃
0.06 25℃
0.04 -55℃
0
0
1.8
246
VGS, GATE-SOURCE VOLTAGE (V)
Figure 17. Typical Transfer Characteristic
8
1.6
VGS=-4.5V,
1.4 ID=-2.0A
1.2
VGS=-10V,
1 ID=-3.0A
0.8
0.02
0 2 4 6 8 10
ID, DRAIN CURRENT (A)
Figure 18. Typical On-Resistance vs Drain Current
and Temperature
DMC25D0UVT
Document number: DS37508 Rev. 3 - 2
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (℃)
Figure 19. On-Resistance Variation with Temperature
7 of 11
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April 2015
© Diodes Incorporated
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DMC25D0UVT | COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET | Diodes |
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