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PDF ACE2607B Data sheet ( Hoja de datos )

Número de pieza ACE2607B
Descripción P-Channel Enhancement Mode Field Effect Transistor
Fabricantes ACE Technology 
Logotipo ACE Technology Logotipo



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ACE2607B
P-Channel Enhancement Mode Field Effect Transistor
Description
ACE2607B is produced with high cell density, DMOS trench technology, which is especially used to
minimize on-state resistance. This device particularly suits for low voltage application such as portable
equipment, power management and other battery powered circuits, and low in-line power loss are needed
in a very small outline surface mount package.
Features
VDS(V)=-30V, ID=-3.5A
RDS(ON)=52mΩ@VGS=-10V
RDS(ON)=68mΩ@VGS=-4.5V
High density cell design for low RDS(ON)
Absolute Maximum Ratings
Parameter
Symbol Max Unit
Drain-Source Voltage
VDSS
-30 V
Gate-Source Voltage
VGSS ±20 V
Drain Current (Note 1) Continuous TA=25
Pulse (Note 2)
ID
-3.5
A
-20
Power Dissipation(1) (Note 1)
PD 650 mW
Operating and Storage Temperature Range TJ,TSTG -55 to 150 OC
Packaging Type
SOT-23-6L
1
VER 1.3 1

1 page




ACE2607B pdf
ACE2607B
P-Channel Enhancement Mode Field Effect Transistor
Notes
ACE does not assume any responsibility for use as critical components in life support devices or systems
without the express written approval of the president and general counsel of ACE Electronics Co., LTD.
As sued herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and shoes failure to perform when properly used in
accordance with instructions for use provided in the labeling, can be reasonably expected to result in
a significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can
be reasonably expected to cause the failure of the life support device or system, or to affect its safety
or effectiveness.
ACE Technology Co., LTD.
http://www.ace-ele.com/
VER 1.3 5

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