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PDF C2M0025120D Data sheet ( Hoja de datos )
| Número de pieza | C2M0025120D | |
| Descripción | Silicon Carbide Power MOSFET | |
| Fabricantes | Cree | |
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VDS 1200 V
C2M0025120D
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
ID @ 25˚C
90 A
RDS(on) 25 mΩ
N-Channel Enhancement Mode
Features
Package
• High Blocking Voltage with Low On-Resistance
• High Speed Switching with Low Capacitances
• Easy to Parallel and Simple to Drive
• Avalanche Ruggedness
• Resistant to Latch-Up
• Halogen Free, RoHS Compliant
Benefits
TO-247-3
• Higher System Efficiency
• Reduced Cooling Requirements
• Increased Power Density
• Increased System Switching Frequency
Applications
• Solar Inverters
• Switch Mode Power Supplies
• High Voltage DC/DC converters
• Battery Chargers
• Motor Drive
• Pulsed Power Applications
Part Number
C2M0025120D
Package
TO-247-3
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Parameter
Value
Unit
Test Conditions
VDSmax
VGSmax
VGSop
Drain - Source Voltage
Gate - Source Voltage
Gate - Source Voltage
ID Continuous Drain Current
ID(pulse) Pulsed Drain Current
PD Power Dissipation
TJ , Tstg Operating Junction and Storage Temperature
1200
-10/+25
-5/+20
90
60
250
463
-55 to
+150
V VGS = 0 V, ID = 100 μA
V Absolute maximum values
V Recommended operational values
A VGS =20 V, TC = 25˚C
VGS =20 V, TC = 100˚C
A Pulse width tP limited by Tjmax
W TC=25˚C, TJ = 150 ˚C
˚C
TL Solder Temperature
Md Mounting Torque
260 ˚C 1.6mm (0.063”) from case for 10s
1
8.8
Nm
lbf-in
M3 or 6-32 screw
Note
Fig. 19
Fig. 22
Fig. 20
1 C2M0025120D Rev. B, 10-2015
1 page  
Typical Performance
-5 -4
Conditions:
TJ = -55 °C
tp < 200 µs
-3
VGS = 0 V
-2 -1
VGS = 5 V
0
0
-20
VGS = 10 V
VGS = 15 V
VGS = 20 V
Drain-Source Voltage, VDS (V)
-40
-60
-80
-100
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-5 -4
Conditions:
TJ = 150 °C
tp < 200 µs
-3 -2 -1
VGS = 0 V
VGS = 5 V
VGS = 10 V
VGS = 15 V
VGS = 20 V
0
0
-20
-40
-60
-80
Drain-Source Voltage, VDS (V)
-100
Figure 15. 3rd Quadrant Characteristic at 150 ºC
10000
1000
Ciss
Conditions:
TJ = 25 °C
Coss
VAC = 25 mV
f = 1 MHz
100
Crss
10
-5 -4
Conditions:
TJ = 25 °C
tp < 200 µs
-3
VGS = 0 V
-2 -1
VGS = 5 V
0
0
-20
VGS = 10 V
-40
VGS = 15 V
VGS = 20 V
-60
-80
Drain-Source Voltage, VDS (V)
Figure 14. 3rd Quadrant Characteristic at 25 ºC
150
-100
120
90
60
30
0
0
200
400
600
800
1000
1200
Drain to Source Voltage, VDS (V)
Figure 16. Output Capacitor Stored Energy
10000
1000
100
Ciss
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Coss
Crss
10
1
0 50 100 150
Drain-Source Voltage, VDS (V)
Figure 17. Capacitances vs. Drain-Source
Voltage (0-200 V)
200
1
0 200 400 600 800
Drain-Source Voltage, VDS (V)
Figure 18. Capacitances vs. Drain-Source
Voltage (0-1000 V)
1000
5 C2M0025120D Rev. B, 10-2015
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet C2M0025120D.PDF ] | |
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