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Número de pieza | SDP03N80 | |
Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
Fabricantes | SamHop Microelectronics | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SDP03N80 (archivo pdf) en la parte inferior de esta página. Total 11 Páginas | ||
No Preview Available ! Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP03N80
SDF03N80
Ver 1.1
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
800V
3.0A
3.3 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
Marking Code
Delivery Mode
RoHS Status
SDP03N80HZ
TO-220
SDP03N80
Tube
Halogen Free
SDP03N80PZ
TO-220
03N80
Tube
Pb Free
SDF03N80HZ
TO-220F
SDF03N80
Tube
Halogen Free
SDF03N80PZ
TO-220F
03N80
Tube
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP03N80 SDF03N80
VDS Drain-Source Voltage
800
VGS Gate-Source Voltage
ID Drain Current-Continuous a
TC=25°C
TC=70°C
±30 ±30
3 3e
2.5 2.5 e
IDM -Pulsed b
8.9 8.9e
EAS Single Pulse Avalanche Energy d
100
PD
a
Maximum Power Dissipation
TC=25°C
TC=70°C
84 42
58 29
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case a
Thermal Resistance, Junction-to-Ambient a
1.8 3.6 °C/W
62.5 62.5 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
1 page SDP03N80
SDF03N80
Ver 1.1
V( BR )D S S
tp
V DS
L
RG
20V
tp
D .U .T
IA S
0 .0 1
+
- VDD
Unclamped Inductive Test Circuit
F igure 12a.
2
1
D=0.5
IAS
Unclamped Inductive Waveforms
F igure 12b.
0.2
0.1
0.1 0.05
0.02
0.01
S ingle P uls e
0.01
0.00001
0.0001
0.001
0.01
P DM
t1
t2
1. R JC (t)=r (t) * R JC
2. R JC=S ee Datas heet
3. T JM-T C = P * R JC (t )
4. Duty C ycle, D=t1/t2
0.1 1
Square Wave Pulse Duration (msec)
Figure 13a. Normalized Thermal Transient Impedance Curve for SDP03N80
10
2
1
D=0.5
0.1
0.01
0.00001
0.2
0.1
0.05
0.02
0.01
S ingle P uls e
P DM
t1
t2
1. R JC (t)=r (t) * R JC
2. R JC=S ee Datas heet
3. T JM-T C = P * R JC (t )
4. Duty C ycle, D=t1/t2
0.0001
0.001
0.01
0.1
1
S quare Wave P uls e Duration (ms ec)
Figure 13b. Normalized Thermal Transient Impedance Curve for SDF03N80
10
Dec,24,2013
5 www.samhop.com.tw
5 Page SDP03N80
SDF03N80
TOP MARKING DEFINITION
TO-220F (Halogen Free)
Ver 1.1
SDF03N80
XXXXXX
SamHop Logo
Product No.
SMC internal code No. (A,B,C...Z)
Wafer Lot Number
TO-220F (Pb Free)
Production Date (1,2 ~ 9, A,B...)
Production Month (1,2 ~ 9, A,B,C)
Production Year (2009 = 9, 2010 = A...)
SamHop Logo
PB Free
Product No.
03N80
XXXXX
Production Year (2009 = 9, 2010 = A...)
Production Month (1,2 ~ 9, A,B,C)
Production Date (1,2 ~ 9, A,B...)
Wafer Lot Number
Dec,24,2013
11 www.samhop.com.tw
11 Page |
Páginas | Total 11 Páginas | |
PDF Descargar | [ Datasheet SDP03N80.PDF ] |
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