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부품번호 | SDP07N50 기능 |
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기능 | N-Channel Enhancement Mode Field Effect Transistor | ||
제조업체 | SamHop Microelectronics | ||
로고 | |||
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP07N50
SDF07N50
Ver 2.1
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
500V 7A 0.76 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP07N50HZ
TO-220
SDP07N50PZ
TO-220
SDF07N50HZ
TO-220F
SDF07N50PZ
TO-220F
Marking Code
SDP07N50
07N50
SDF07N50
07N50
Delivery Mode
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP07N50 SDF07N50
VDS Drain-Source Voltage
VGS Gate-Source Voltage
500
±30 ±30
ID
Drain Current-Continuous a
TC=25°C
TC=100°C
77
4.9 4.9
IDM -Pulsed a
20 20
EAS Single Pulse Avalanche Energy c
6
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
88 29
44 15
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.7 5.1
62.5 62.5
°C/W
°C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
SDP07N50
SDF07N50
2.4
ID= 3.5A
2.0
125 C
1.6
1.2 75 C
0.8
25 C
0.4
0
0 2 4 6 8 10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
2400
2000
1600
1200
800
C oss
400 C rs s
C is s
0
0 10 20 30 40 50
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 2.1
20.0
10.0
125 C
5.0
75 C
25 C
1.0
0
0.25 0.50 0.75 1.00 1.25
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8
VDS =250V
ID= 1A
6
4
2
0
0 3 6 9 12 15 18 21 24
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
100 100
10
R DS(ON) Limit
10ms 1ms 100us
1
0.1
0.03
0.1
VGS=10V
Single Pulse
TC=25 C
1 10
100 1000
V DS , Drain-S ource V oltage (V )
Figure 11a. Maximum Safe Operating
Area for SDP07N50
4
10
R DS(ON) Limit
1ms100us
1
0.1
0.03
0.1
VGS=10V
Single Pulse
TC=25 C
1 10
100 1000
V DS , Drain-S ource V oltage (V )
Figure 11b. Maximum Safe Operating
Area for SDF07N50
Dec,24,2013
www.samhop.com.tw
4페이지 SDP07N50
SDF07N50
TO-220F
Q
L2
E
Q1 P
A1
A3
D1
D
Ver 2.1
b1x3
L1
L bx3
e
E1
A
c A2
SYMBOL
A
A1
A2
A3
b
b1
c
D
D1
E
E1
e
L
L1
L2
Q
Q1
P
MILLIMETERS
MIN MAX
4.50
2.35
4.90
2.75
2.15
0.50
2.92
0.65
0.70
1.15
0.90
1.55
0.45
0.70
15.30 16.30
6.67
6.77
9.90 10.32
9.20
9.40
2.54 REF.
9.45 10.05
2.79
3.60
15.60 16.00
3.20
3.40
6.90
7.10
2.90
3.55
Dec,24,2013
7 www.samhop.com.tw
7페이지 | |||
구 성 | 총 11 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
SDP07N50 | N-Channel Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |