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부품번호 | SDF08N60 기능 |
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기능 | N-Channel Enhancement Mode Field Effect Transistor | ||
제조업체 | SamHop Microelectronics | ||
로고 | |||
Sa mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
SDP08N60
SDF08N60
Ver 2.1
PRODUCT SUMMARY
VDSS ID RDS(ON) (Ω) Typ
600V 8A 0.89 @ VGS=10V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
TO-220 and TO-220F Package.
D
GDS
SDP SERIES
TO-220
GDS
SDF SERIES
TO-220F
G
S
ORDERING INFORMATION
Ordering Code
Package
SDP08N60HZ
TO-220
SDP08N60PZ
TO-220
SDF08N60HZ
TO-220F
SDF08N60PZ
TO-220F
Marking Code
SDP08N60
08N60
SDF08N60
08N60
Delivery Mode
Tube
Tube
Tube
Tube
RoHS Status
Halogen Free
Pb Free
Halogen Free
Pb Free
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
SDP08N60 SDF08N60
VDS Drain-Source Voltage
600
VGS Gate-Source Voltage
±30 ±30
ID
Drain Current-Continuous a
TC=25°C
TC=100°C
88
5.7 5.7
IDM -Pulsed a
23 23
EAS Single Pulse Avalanche Energy c
400
PD
Maximum Power Dissipation
TC=25°C
TC=100°C
150 50
75 25
TJ, TSTG
Operating Junction and Storage
Temperature Range
-55 to 175
Units
V
V
A
A
A
mJ
W
W
°C
THERMAL CHARACTERISTICS
R JC
R JA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1 3 °C/W
62.5 62.5 °C/W
Details are subject to change without notice.
1
Dec,24,2013
www.samhop.com.tw
SDP08N60
SDF08N60
3.0
ID= 4A
2.5
2.0
125 C
1.5
75 C
1.0
25 C
0.5
0
0 2 4 6 8 10
VGS, Gate-to-Source Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
2400
2000
1600
1200
C is s
800
C oss
400
C rss
0
0 10 20 30 40 50
VDS, Drain-to-Source Voltage(V)
Figure 9. Capacitance
Ver 2.1
20.0
10.0
5.0 125 C
75 C
25 C
1.0
0
0.25 0.50 0.75 1.00 1.25
VSD, Body Diode Forward Voltage(V)
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8 VDS =300V
ID= 1A
6
4
2
0
0 2 4 6 8 10 12 14 16
Qg, Total Gate Charge(nC)
Figure 10. Gate Charge
100
10
R DS(ON) Limit
DC10ms1ms100us
1
100
10
1
R DS(ON) Limit DC10ms1ms100u1s0us
0.1
0.01
0.1
VGS=10V
Single Pulse
TC=25 C
1 10
100 1000
V DS , Drain-S ource V oltage (V )
Figure 11a. Maximum Safe Operating
Area for SDP08N60
4
0.1
0.01
0.1
VGS=10V
Single Pulse
TC=25 C
1 10
100 1000
V DS , Drain-S ource V oltage (V )
Figure 11b. Maximum Safe Operating
Area for SDF08N60
Dec,24,2013
www.samhop.com.tw
4페이지 SDP08N60
SDF08N60
TO-220F
Q
L2
E
Q1 P
A1
A3
D1
D
Ver 2.1
b1x3
L1
L bx3
e
E1
A
c A2
SYMBOL
A
A1
A2
A3
b
b1
c
D
D1
E
E1
e
L
L1
L2
Q
Q1
P
MILLIMETERS
MIN MAX
4.50
2.35
4.90
2.75
2.15
0.50
2.92
0.65
0.70
1.15
0.90
1.55
0.45
0.70
15.30 16.30
6.67
6.77
9.90 10.32
9.20
9.40
2.54 REF.
9.45 10.05
2.79
3.60
15.60 16.00
3.20
3.40
6.90
7.10
2.90
3.55
Dec,24,2013
7 www.samhop.com.tw
7페이지 | |||
구 성 | 총 11 페이지수 | ||
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부품번호 | 상세설명 및 기능 | 제조사 |
SDF08N60 | N-Channel Enhancement Mode Field Effect Transistor | SamHop Microelectronics |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |