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PDF AO3418L Data sheet ( Hoja de datos )
| Número de pieza | AO3418L | |
| Descripción | N-Channel Enhancement Mode Field Effect Transistor | |
| Fabricantes | KERSEMI | |
| Logotipo |  |
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Features
VDS (V) = 30V
ID = 3.8 A
RDS(ON) < 60mΩ (VGS = 10V)
RDS(ON) < 70mΩ (VGS = 4.5V)
RDS(ON) < 155mΩ (VGS = 2.5V)
AO3418, AO3418L ( Green Product )
N-Channel Enhancement Mode Field Effect Transistor
TO-236
(SOT-23)
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General Description
The AO3418 uses advanced trench technology to
provide excellent RDS(ON), very low gate charge and
operation with gate voltages as low as 2.5V. This
device is suitable for use as a load switch or in PWM
applications. AO3418L ( Green Product ) is offered in
a lead-free package.
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID
IDM
TA=25°C
Power Dissipation A TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum
30
±12
3.8
3.1
15
1.4
0.9
-55 to 150
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s
Steady-State
Steady-State
Symbol
RθJA
RθJL
Typ
70
100
63
Max
90
125
80
D
S
Units
V
V
A
W
°C
Units
°C/W
°C/W
°C/W
2014-5-29
1 www.kersemi.com
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet AO3418L.PDF ] | |
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