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FDP7N60NZ 데이터시트 PDF




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부품번호 FDP7N60NZ 기능
기능 N-Channel MOSFET
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FDP7N60NZ 데이터시트, 핀배열, 회로
March 2013
FDP7N60NZ / FDPF7N60NZ
N-Channel UniFETTM II MOSFET
600 V, 6.5 A, 1.25
Features
• RDS(on) = 1.05 (Typ.) @ VGS = 10 V, ID = 3.25 A
• Low Gate Charge (Typ. 13 nC)
• Low Crss (Typ. 7 pF)
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
Applications
• LCD/LED TV
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
Description
UniFETTM II MOSFET is Fairchild Semiconductor®’s high volt-
age MOSFET family based on advanced planar stripe and
DMOS technology. This advanced MOSFET family has the
smallest on-state resistance among the planar MOSFET, and
also provides superior switching performance and higher ava-
lanche energy strength. In addition, internal gate-source ESD
diode allows UniFET II MOSFET to withstand over 2kV HBM
surge stress. This device family is suitable for switching power
converter applications such as power factor correction (PFC), flat
panel display (FPD) TV power, ATX and electronic lamp ballasts.
G
D
S
TO-220
G
D
S
TO-220F
MOSFET Maximum Ratings TC = 25oC unless otherwise noted*
Symbol
Parameter
VDSS
VGSS
ID
IDM
EAS
IAR
EAR
dv/dt
PD
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25oC)
- Continuous (TC = 100oC)
- Pulsed
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP7N60NZ FDPF7N60NZ
600
±30
6.5 6.5*
3.9 3.9*
26 26*
275
6.5
14.7
10
147 33
1.2 0.26
-55 to +150
300
Unit
V
V
A
A
mJ
A
mJ
V/ns
W
W/oC
oC
oC
Symbol
RJC
RCS
RJA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Case to Sink, Typ.
Thermal Resistance, Junction to Ambient, Max.
©2010 Fairchild Semiconductor Corporation
FDP7N60NZ / FDPF7N60NZ Rev. C0
1
FDP7N60NZ
0.85
0.5
62.5
FDPF7N60NZ
3.8
-
62.5
Unit
oC/W
www.fairchildsemi.com




FDP7N60NZ pdf, 반도체, 판매, 대치품
Typical Performance Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs Temperature
3.0
2.5
1.1
2.0
1.0
0.9
0.8
-100
* Notes :
1. VGS = 0V
2. ID = 250uA
-50 0 50 100
TJ, Junction Temperature [oC]
150
1.5
1.0
0.5
0
-100
* Notes :
1. VGS = 10V
2. ID = 3.25A
-50 0 50 100
TJ, Junction Temperature [oC]
150
Figure 9. Maximum Safe Operating Area
-FDPF7N60NZ
100
Figure 10. Maximum Drain Current
-FDP7N60NZ
100
10s
10 100s
1ms
1
Operation in This Area
is Limited by R DS(on)
10ms
DC
0.1
0.01
1
* Notes :
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10 100
VDS, Drain-Source Voltage [V]
1000
30s
10 100s
1ms
10ms
1
Operation in This Area
is Limited by R DS(on)
DC
0.1
0.01
1
* Notes :
1. TC = 25oC
2. TJ = 150oC
3. Single Pulse
10 100
VDS, Drain-Source Voltage [V]
1000
Figure 11. Maximum Drain Current vs Case Temperature
8
6
4
2
0
25 50 75 100 125 150
TC, Case Temperature [oC]
©2010 Fairchild Semiconductor Corporation
FDP7N60NZ / FDPF7N60NZ Rev. C0
4
www.fairchildsemi.com

4페이지










FDP7N60NZ 전자부품, 판매, 대치품
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
Same Type
as DUT
• dv/dt controlled by RG
• ISD controlled by pulse period
VDD
VGS
( Driver )
I SD
( DUT )
VDS
( DUT )
D = --G--a--t-e---P--u-l-s-e---W---i-d-t-h--
Gate Pulse Period
10V
IFM , Body Diode Forward Current
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VSD
Body Diode
Forward Voltage Drop
VDD
©2010 Fairchild Semiconductor Corporation
FDP7N60NZ / FDPF7N60NZ Rev. C0
7
www.fairchildsemi.com

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N-Channel MOSFET

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