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부품번호 | BCW68GL 기능 |
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기능 | General Purpose Transistors | ||
제조업체 | ON Semiconductor | ||
로고 | |||
전체 5 페이지수
BCW68GL
General Purpose Transistor
PNP Silicon
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
COLLECTOR
3
1
BASE
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
VCEO −45 Vdc
Collector−Base Voltage
VCBO −60 Vdc
Emitter−Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
IC
−800
mAdc
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR−5 Board
(Note 1) TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
556 °C/W
Total Device Dissipation
Alumina Substrate (Note 2)
TA = 25°C
Derate above 25°C
PD 300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
−55 to +150
°C
2
EMITTER
3
1
2
SOT−23
CASE 318
STYLE 6
MARKING DIAGRAM
DG MG
G
DG = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may vary
depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
BCW68GLT1G,
SOT−23 3000 / Tape &
NSVBCW68GLT1G (Pb−Free)
Reel
BCW68GLT3G
SOT−23 10000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
March, 2015 − Rev. 7
1
Publication Order Number:
BCW68GLT1/D
BCW68GL
TYPICAL CHARACTERISTICS
-1.0
TJ = 25°C
-0.8
-0.6 IC =
-500 mA
-0.4
IC = -300 mA
-0.2 IC = -100 mA
IC = -10 mA
0
-0.01
-0.1
-1.0
-10
IB, BASE CURRENT (mA)
Figure 6. Saturation Region
-100
+1.0
qVC for VCE(sat)
0
-1.0
100
10
-2.0 qVB for VBE
-1.0 -10 -100 -1000
IC, COLLECTOR CURRENT (mA)
Figure 7. Temperature Coefficients
1.0
-0.1
Cib
-1.0 -10
VR, REVERSE VOLTAGE (VOLTS)
Figure 8. Capacitances
Cob
-100
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