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부품번호 | SMUN5233DW 기능 |
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기능 | NPN Multi-Chip Built-in Resistors Transistor | ||
제조업체 | SeCoS | ||
로고 | |||
전체 8 페이지수
Elektronische Bauelemente
SMUN52XXDW
NPN Multi-Chip
Built-in Resistors Transistor
The BRT (Bias Resistor Transistor) contains a single transistor
with a monolithic bias network consisting of two resistors; a series
base resistor and a base–emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them
into a single device. In the SMUN5211DW series, two BRT devices are
housed in the SOT–363 package which is ideal for low power surface
mount applications where board space is at a premium.
• Simplifies Circuit Design
• Reduces Board Space
• Reduces Component Count
• Pb-Free Package is available
6 54
Q2 R1 R2
R2
R1
Q1
12
3
MARKING DIAGRAM
6 54
7X
1 23
7X = Device Marking
.055(1.40)
.047(1.20)
SOT-363
.026TYP
(0.65TYP)
.021REF
(0.525)REF
8o
0o
.096(2.45)
.085(2.15)
.053(1.35)
.045(1.15)
.014(0.35)
.006(0.15)
.087(2.20)
.079(2.00)
.043(1.10)
.035(0.90)
.018(0.46)
.010(0.26)
.006(0.15)
.003(0.08)
.004(0.10)
.000(0.00)
.039(1.00)
.035(0.90)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 )
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Symbol
V CBO
V CEO
IC
Value
50
50
100
Unit
Vdc
Vdc
mAdc
THERMAL CHARACTERISTICS
Characteristic (One Junction Heated)
Total Device Dissipation T A = 25°C
Derate above 25°C
Thermal Resistance – Junction-to-Ambient
Characteristic (Both Junctions Heated)
Total Device Dissipation T A = 25°C
Derate above 25°C
Thermal Resistance – Junction-to-Ambient
Thermal Resistance – Junction-to-Lead
Junction and Storage Temperature
Symbol
PD
R JA
Symbol
PD
R θJA
R θJL
T J , T stg
Max
Note 1 Note 2
187 256
1.5 2.0
670 490
Max
Note 1
Note 2
250 385
2.0 3.0
493 325
188 208
–55 to +150
Unit
mW
mW/°C
°C/W
Unit
mW
mW/°C
°C/W
°C/W
°C
1. FR–4 @ Minimum Pad 2. FR–4 @ 1.0 x 1.0 inch Pad
http://www.SeCoSGmbH.com
22-Jun-2007 Rev. A
Any changing of specification will not be informed individual
Page 1 of 8
Elektronische Bauelemente
SMUN52XXDW
NPN Multi-Chip
Built-in Resistors Transistor
ELECTRICAL CHARACTERISTICS
(T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) (Continued)
Characteristic
Symbol Min Typ
ON CHARACTERISTICS(Note 6.)
Max
Unit
Input Resistor
Resistor Ratio
SMUN5211DW
SMUN5212DW
SMUN5213DW
SMUN5214DW
SMUN5215DW
SMUN5216DW
SMUN5230DW
SMUN5231DW
SMUN5232DW
SMUN5233DW
SMUN5234DW
SMUN5235DW
SMUN5236DW
SMUN5237DW
SMUN5211DW/SMUN5212DW
SMUN5213DW/SMUN5236DW
SMUN5214DW/SMUN5215DW
SMUN5216DW/SMUN5230DW
SMUN5231DW/SMUN5232DW
SMUN5233DW
SMUN5234DW
SMUN5235DW
SMUN5237DW
R 7.0
1
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
R 1 /R2
0.8
0.17
–
0.8
0.055
0.38
0.038
1.7
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
–
1.2
0.185
0.56
0.056
2.6
kΩ
6. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
300
250
200
150
100
50 833°C
0
–50
0 50 100
T A , AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
150
http://www.SeCoSGmbH.com
22-Jun-2007 Rev. A
Any changing of specification will not be informed individual
Page 4 of 8
4페이지 Elektronische Bauelemente
SMUN52XXDW
NPN Multi-Chip
Built-in Resistors Transistor
TYPICAL ELECTRICAL CHARACTERISTICS – SMUN5213DW
10 1000
1
100
0.1
0.01
0
1
20 40
I C , COLLECTOR CURRENT (mA)
Figure 12. V CE(sat) versus I C
10
50 1
100
10
I C , COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
100
0.8 10
0.6 1
0.4 0.1
0.2 0.01
0
0 10 20 30 40
V R , REVERSE BIAS VOLTAGE (VOLTS)
Figure 14. Output Capacitance
50
0.001
0
12
34
56
78
9 10
V in , INPUT VOLTAGE (VOLTS)
Figure 15. Output Current versus Input oltage
100
10
1
0.1
0
10 20 30 40 50
I C , COLLECTOR CURRENT (mA)
Figure 16. Input Voltage versus Output Current
http://www.SeCoSGmbH.com
22-Jun-2007 Rev. A
Any changing of specification will not be informed individual
Page 7 of 8
7페이지 | |||
구 성 | 총 8 페이지수 | ||
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구매 문의 | 일반 IC 문의 : 샘플 및 소량 구매 ----------------------------------------------------------------------- IGBT, TR 모듈, SCR 및 다이오드 모듈을 포함한 광범위한 전력 반도체를 판매합니다. 전력 반도체 전문업체 상호 : 아이지 인터내셔날 사이트 방문 : [ 홈페이지 ] [ 블로그 1 ] [ 블로그 2 ] |
부품번호 | 상세설명 및 기능 | 제조사 |
SMUN5233DW | NPN Multi-Chip Built-in Resistors Transistor | SeCoS |
SMUN5233DW1T1G | Dual NPN Bias Resistor Transistors | ON Semiconductor |
DataSheet.kr | 2020 | 연락처 | 링크모음 | 검색 | 사이트맵 |