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SMUN5311DW 데이터시트, 핀배열, 회로
Elektronische Bauelemente
SMUN5311DW Series
NPN / PNP
Digital Small Signal Transistors
RoHS Compliant Product
A suffix of “-C” indicates halogen-free.
DESCRIPTION
The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic
bias network consisting of two resistors; a series base resistor and a base−emitter
resistor. These digital transistors are designed to replace a single device and its
external resistor bias network. The BRT eliminates these individual components by
integrating them into a single device. In the SMUN5311DW series, two
complementary BRT devices are housed in the SOT−363 package which is ideal
for low power surface mount applications where board space is at a premium.
FEATURE
Simplifies circuit design
Reduces board space
Reduces component count
Available in 8 mm, 7 inch/3000 unit tape and reel
The devices are Pb-Free
F
DG
SOT-363
A
E
L
B
K
C
H
J
6 54
Q2 R1 R2
R2
R1
Q1
12
3
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.00 2.20
2.15 2.45
1.15 1.35
0.90 1.10
1.20 1.40
0.15 0.35
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.100 REF.
0.525 REF.
0.08 0.15
0.650 TYP.
MAXIMUM RATINGS AND THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q 2, minus sign for Q1(PNP) omitted)
PARAMETER
SYMBOL
VALUE
Collector - Base Voltage
Collector - Emitter Voltage
Collector Currrent – Continuous
VCBO
50
VCEO
50
IC 100
ONE JUNCTION HEATED THERMAL CHARACTERISTICS
Total Device Dissipation, TA=25°C
Total Device Dissipation, Derate above 25°C
187(1)
256(2)
PD
1.5(1)
2.0(2)
Thermal Resistance, Junction to Ambient
670(1)
RθJA
490(2)
BOTH JUNCTION HEATED THERMAL CHARACTERISTICS
Total Device Dissipation, TA=25°C
Total Device Dissipation, Derate above 25°C
250(1)
385(2)
PD
2.0(1)
3.0(2)
Thermal Resistance, Junction to Ambient
493(1)
RθJA
325(2)
Thermal Resistance, Junction to Lead
188(1)
RθJL 208(2)
Junction Temperature & Storage Temperature
Note:
1. FR-4 @ minimum pad
2. FR-4 @ 1.0 x 1.0 inch pad
TJ,TSTG
-55~150
UNIT
Vdc
Vdc
mAdc
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C/W
°C
18-Dec-2009 Rev. A
Page 1 of 28




SMUN5311DW pdf, 반도체, 판매, 대치품
Elektronische Bauelemente
SMUN5311DW Series
NPN / PNP
Digital Small Signal Transistors
DEVICE MARKING AND RESISTOR VALUES
DEVICE
SMUN5311DW
SMUN5312DW
SMUN5313DW
SMUN5314DW
SMUN5315DW
SMUN5316DW
MARKING
11
12
13
14
15
16
R1(K)
10
22
47
10
10
4.7
R2(K)
10
22
47
47
DEVICE
SMUN5330DW
SMUN5331DW
SMUN5332DW
SMUN5333DW
SMUN5334DW
SMUN5335DW
MARKING
30
31
32
33
34
35
R1(K)
1.0
2.2
4.7
4.7
22
2.2
R2(K)
1.0
2.2
4.7
47
47
47
CHARACTERISTIC CURVES
ALL SMUN5311DW SERIES DEVICES
300
250
200
150
100
50
0
50
Rθ JA = 490°C/W
0 50 100
TA, AMBIENT TEMPERATURE (°C)
Figure 1. Derating Curve
150
18-Dec-2009 Rev. A
Page 4 of 28

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SMUN5311DW 전자부품, 판매, 대치품
Elektronische Bauelemente
SMUN5311DW Series
NPN / PNP
Digital Small Signal Transistors
CHARACTERISTIC CURVES
TYPICAL ELECTRICAL CHARACTERISTICS SMUN5312DW NPN TRANSISTOR
1
IC/BI = 10
0.1 TA = 2-5°C
0.01
25°C
75°C
1000
100
VCE = 10 V
TA = 5°7C
25°C
-25°C
0.001
0
10
20
40 50
1
IC, COLLEOCRT CURRENT (mA)
Figure 12. VCE(sat) versus IC
10
IC, COLLEOCRT CURRENT (mA)
Figure 13. DC Current Gain
100
4 100 75°C 25°C
f = 1 MHz
IE = 0 V
10
TA = 2-5°C
3 TA = 2°C5
1
2
0.1
1
0.01
0 0.001
0 10 20 30 40 50
02
46
VO = 5 V
8 10
VR, REVERSE BIASTAVGOEL (VOTLS)
Vin, INPUT TVAOGLE (VOTLS)
Figure 14. Output Capacitance
Figure 15. Output Current versus Input Voltage
100
VO = 0.2 V
10
1
TA = 2-5°C
75°C 25°C
18-Dec-2009 Rev. A
0.1
0
10 20
30 40
IC, COLLEOCRT CURRENT (mA)
Figure 16. Input Voltage versus Output
Current
50
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